发明授权
US4918033A PECVD (plasma enhanced chemical vapor deposition) method for depositing
of tungsten or layers containing tungsten by in situ formation of
tungsten fluorides
失效
PECVD（等离子体增强化学气相沉积）方法，用于通过原位形成氟化钨沉积钨或钨层
- 专利标题： PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
- 专利标题（中）： PECVD（等离子体增强化学气相沉积）方法，用于通过原位形成氟化钨沉积钨或钨层
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申请号： US239569申请日： 1988-09-01
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公开(公告)号： US4918033A公开(公告)日： 1990-04-17
- 发明人: Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
- 申请人： Johann W. Bartha , Thomas Bayer , Johann Greschner , Georg Kraus , Gerhard Schmid
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 优先权： EPX87119192 19871224
- 主分类号： C23C16/08
- IPC分类号： C23C16/08 ; C23C16/30 ; C23C16/448 ; C23C16/50 ; H01L21/28 ; H01L21/285
摘要：
The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.
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