发明授权
- 专利标题： CMOS device having Schottky diode for latch-up prevention
- 专利标题（中）： 具有用于防止闩锁的肖特基二极管的CMOS器件
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申请号： US81391申请日： 1987-08-04
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公开(公告)号： US4922317A公开(公告)日： 1990-05-01
- 发明人: Teruyoshi Mihara
- 申请人： Teruyoshi Mihara
- 申请人地址： JPX Yokohama
- 专利权人： Nissan Motor Company, Limited
- 当前专利权人： Nissan Motor Company, Limited
- 当前专利权人地址： JPX Yokohama
- 优先权： JPX61-183476 19860806
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L27/092
摘要：
A CMOS device having an nMOS formed in a p-type substrate region, and a pMOS formed in an n-type substrate region is provided with a Schottky barrier junction for collecting holes injected into the n-type substrate region, to prevent latch-up. The Schottky barrier junction is formed by a metal electrode and the n-type substrate region, and is located between the pMOS and the nMOS.
公开/授权文献
- US6105323A Wall drainage assembly 公开/授权日：2000-08-22
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