发明授权
- 专利标题： Simplified method of fabricating lightly doped drain insulated gate field effect transistors
- 专利标题（中）： 制造轻掺杂漏极绝缘栅场效应晶体管的简化方法
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申请号： US186555申请日： 1988-04-27
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公开(公告)号： US4923824A公开(公告)日： 1990-05-08
- 发明人: Daniel J. Fertig , Matthew F. Schmidt
- 申请人： Daniel J. Fertig , Matthew F. Schmidt
- 申请人地址： MN Bloomington
- 专利权人： VTC Incorporated
- 当前专利权人： VTC Incorporated
- 当前专利权人地址： MN Bloomington
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/78
摘要：
A lightly doped drain in an IGFET is provided by fabricating the transistor in a epitaxial layer lightly doped in the conductivity type of the channel for the device. The laterally reduced dopant concentration of the drain, and a lightly doped source if desired, is provided by leaving portions of the epitaxial layer unmodified.
公开/授权文献
- US6134300A Miniature x-ray source 公开/授权日：2000-10-17
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