发明授权
- 专利标题： Semiconductor device including a channel stop region
- 专利标题（中）： 包括通道停止区域的半导体器件
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申请号： US370082申请日： 1989-06-21
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公开(公告)号： US4931850A公开(公告)日： 1990-06-05
- 发明人: Takahiro Yamada
- 申请人： Takahiro Yamada
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX60-148710 19850705; JPX60-149530 19850708; JPX60-206812 19850919
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/772
摘要：
An insulated gate SIT (IBCM-SIT) which is substantially free from punch-through and hot carriers and exhibits a triode characterisic. Also, an insulated gate SIT (ISIS-SIT) which exhibit a tetrode or pentode characteristic, not by an r.sub.s feedback effect, but by the addition of a static shield region. When those devices are used to construct a complementary circuit, no significant latch-up occurs.
公开/授权文献
- US5517053A Self stabilizing heater controlled oscillating transistor 公开/授权日：1996-05-14
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