发明授权
- 专利标题： Devices having tantalum silicide structures
- 专利标题（中）： 具有硅化钽结构的器件
-
申请号： US78013申请日： 1987-07-27
-
公开(公告)号： US4937643A公开(公告)日： 1990-06-26
- 发明人: Jean S. Deslauriers , Hyman J. Levinstein
- 申请人： Jean S. Deslauriers , Hyman J. Levinstein
- 申请人地址： NY New York
- 专利权人： American Telephone and Telegraph Company
- 当前专利权人： American Telephone and Telegraph Company
- 当前专利权人地址： NY New York
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3213
摘要：
A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.
公开/授权文献
- USD399750S Combined bottle and cap 公开/授权日：1998-10-20
信息查询
IPC分类:
