发明授权
- 专利标题： Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips
- 专利标题（中）： 集成电路芯片中场效应晶体管的场隔离制造方法和结构
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申请号： US173918申请日： 1988-03-28
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公开(公告)号： US4942449A公开(公告)日： 1990-07-17
- 发明人: Ching-Yeu Wei , Patricia A. Piacente , Henry H. Woodbury
- 申请人： Ching-Yeu Wei , Patricia A. Piacente , Henry H. Woodbury
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/316 ; H01L21/762 ; H01L29/78
摘要：
A method for forming a field oxide isolation region for a field effect transistor for use in integrated circuit chip devices includes process steps which preserve planarity while at the same time providing an increased degree of radiation hardness. The bird's beak region of the device is provided with both thermally grown and deposited oxide layers in a planarity preserving process.
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