发明授权
- 专利标题： BICMOS regulator which controls MOS transistor current
- 专利标题（中）： 控制MOS晶体管电流的BICMOS调节器
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申请号： US421230申请日： 1989-10-12
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公开(公告)号： US4943737A公开(公告)日： 1990-07-24
- 发明人: Tzen-Wen Guo , Jonathan J. Stinehelfizer
- 申请人： Tzen-Wen Guo , Jonathan J. Stinehelfizer
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/8249
- IPC分类号： H01L21/8249 ; G05F1/56 ; G05F3/20 ; G05F3/26 ; G05F3/30 ; H01L27/06
摘要：
A bipolar/CMOS regulator circuit for generating a CMOS gate-controlling voltage, which varies favorably with temperature, power supply voltage and process corner so as to yield a well-controlled CMOS current includes a bipolar bandgap regulator circuit portion (12) and a conversion circuit portion (14). The conversion circuit portion (14) is formed of a current mirror section (18), a current source section (20) and an output section (22).
公开/授权文献
- US5617838A Archery aid 公开/授权日：1997-04-08
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