发明授权
- 专利标题： Semiconductor circuit for driving the base of a bipolar transistor
- 专利标题（中）： 用于驱动双极晶体管的基极的半导体电路
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申请号： US254568申请日： 1988-10-07
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公开(公告)号： US4948994A公开(公告)日： 1990-08-14
- 发明人: Takashi Akioka , Atsuo Watanabe , Takahiro Nagano
- 申请人： Takashi Akioka , Atsuo Watanabe , Takahiro Nagano
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-253700 19871009
- 主分类号： H03K17/04
- IPC分类号： H03K17/04 ; H03K17/00 ; H03K17/0412 ; H03K17/567 ; H03K19/08 ; H03K19/0944
摘要：
A system providing a drive circuit for a bipolar transistor high in speed and low in power consumption even under a low source voltage using a MOSFET is disclosed. The base current of the bipolar transistor is supplied not by short-circuiting the collector and the base thereof by a MOSFET but from another base current source.
公开/授权文献
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