发明授权
US4951113A Simultaneously deposited thin film CMOS TFTs and their method of
fabrication
失效
同时沉积的薄膜CMOS TFT及其制造方法
- 专利标题： Simultaneously deposited thin film CMOS TFTs and their method of fabrication
- 专利标题（中）： 同时沉积的薄膜CMOS TFT及其制造方法
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申请号： US268832申请日： 1988-11-07
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公开(公告)号： US4951113A公开(公告)日： 1990-08-21
- 发明人: Tiao-Yuan Huang , Anne Chiang , I-Wei Wu
- 申请人： Tiao-Yuan Huang , Anne Chiang , I-Wei Wu
- 申请人地址： CT Stamford
- 专利权人： Xerox Corporation
- 当前专利权人： Xerox Corporation
- 当前专利权人地址： CT Stamford
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L27/12 ; H01L29/78 ; H01L29/786
摘要：
A thin film SOI CMOS device wheren the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor layer and are separated from the corresponding gate element and source and drain elements formed in an upper, highly doped, semiconductor layer. The layer levels are separated by two intrinsic or lightly doped semiconductor layers sandwiching a dielectric layer, so that the intrinsic or lightly doped semiconductor layer lying contiguous to the source and drain elements serves as an active channel layer and the intrinsic or lightly doped semiconductor layer lying contiguous to the gate element serves to extend the gate layer.