发明授权
- 专利标题: Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
- 专利标题(中): 制造用于生长单晶半导体的石英玻璃容器
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申请号: US376136申请日: 1989-07-06
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公开(公告)号: US4956208A公开(公告)日: 1990-09-11
- 发明人: Akira Uchikawa , Atsushi Iwasaki , Toshio Fukuoka , Mitsuo Matsumura , Hiroshi Matsui , Yasuhiko Sato , Masaaki Aoyama , Eiichi Shinomiya , Akira Fujinoki , Nobuyoshi Ogino
- 申请人: Akira Uchikawa , Atsushi Iwasaki , Toshio Fukuoka , Mitsuo Matsumura , Hiroshi Matsui , Yasuhiko Sato , Masaaki Aoyama , Eiichi Shinomiya , Akira Fujinoki , Nobuyoshi Ogino
- 申请人地址: JPX Tokyo JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.,Shin-Etsu Quartz Products Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.,Shin-Etsu Quartz Products Co., Ltd.
- 当前专利权人地址: JPX Tokyo JPX Tokyo
- 优先权: JPX62-304624 19871203; JPX62-304625 19871203; JPX62-304626 19871203
- 主分类号: C03B19/09
- IPC分类号: C03B19/09 ; C30B15/10 ; C30B35/00
摘要:
A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.
公开/授权文献
- US06154888A Stethoscope pocket 公开/授权日:2000-12-05
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