发明授权
- 专利标题: Method and apparatus for heat-treating a substrate
- 专利标题(中): 用于热处理基底的方法和装置
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申请号: US371807申请日: 1989-06-27
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公开(公告)号: US4958061A公开(公告)日: 1990-09-18
- 发明人: Tsuyoshi Wakabayashi , Shigehito Ibuka
- 申请人: Tsuyoshi Wakabayashi , Shigehito Ibuka
- 申请人地址: JPX Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-156679 19880627
- 主分类号: H01L21/26
- IPC分类号: H01L21/26 ; H01L21/00
摘要:
A heat-treating method and apparatus are disclosed which are employed for the manufacture of, for example, a semiconductor device. A substrate to be treated is set in a floating state with an air space defined relative to an underlying opposite surface. A ring-like temperature security member is located with a small gap left relative to an outer periphery of the substrate. The heating of the substrate is achieved in this state. Infrared lamps are selected as a heating source and the surface underlying the substrate provides a reflection surface. The rear surface of the substrate is heated by reflection light travelling across the aforementioned air space. A heat dissipation from the marginal edge portion of the substrate is prevented by the temperature security member to obtain uniformity of heat over the whole area of the substrate. The presence of the air space ensures the ready loading and unloading of the substrate and hence the ready operability. It is also possible to prevent generation of dust resulting from a frictional contact between the substrate and the opposite surface.
公开/授权文献
- US4452139A Dampening fluid evaporator and method 公开/授权日:1984-06-05
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