- 专利标题: Semiconductor laser device
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申请号: US339125申请日: 1989-04-14
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公开(公告)号: US4961197A公开(公告)日: 1990-10-02
- 发明人: Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
- 申请人: Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-222310 19880907; JPX63-228670 19880914; JPX63-261485 19881019; JPX01-1392 19890110; JPX01-46503 19890301
- 主分类号: H01S5/065
- IPC分类号: H01S5/065 ; H01S5/22 ; H01S5/223 ; H01S5/30 ; H01S5/34 ; H01S5/343
摘要:
A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type has impurities that are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feedback occurs. 259
公开/授权文献
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