Invention Grant
US4962486A Boundary-free semiconductor memory device having a plurality of slide
access memories
失效
具有多个滑动存取存储器的无边界的半导体存储器件
- Patent Title: Boundary-free semiconductor memory device having a plurality of slide access memories
- Patent Title (中): 具有多个滑动存取存储器的无边界的半导体存储器件
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Application No.: US204135Application Date: 1988-06-08
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Publication No.: US4962486APublication Date: 1990-10-09
- Inventor: Yusuke Masuda , Junji Ogawa
- Applicant: Yusuke Masuda , Junji Ogawa
- Applicant Address: JPX Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JPX Kawasaki
- Priority: JPX62-143254 19870610
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G06T1/60 ; G11C8/12
Abstract:
A plurality of slide access memories (SM.sub.00, SM.sub.01, . . . , SM.sub.n-1, m-1), in which a voluntary rectangular group of bits can be accessed, are arranged in an n-rows and m-columns matrix and connected to common data lines (D.sub.0, D.sub.1, . . . , D.sub.15). A first access means accesses the same rectangular group of bits in each of the slide access memories and interconnects these groups to input/output portions incorporated into each of the slide access memories. A second access means selects the input/output portions of each of the slide access memories to enable or disable the operation thereof in accordance with a special bit position, or a pointing bit (PB) position, to thereby connect only a desired group of bits to common data lines, and thus enlarge the scope of slide access memories.
Public/Granted literature
- US4321391A Preparation of L-aspartic acid N-thiocarboxyanhydride Public/Granted day:1982-03-23
Information query
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