发明授权
- 专利标题： Semiconductor light emitting device
- 专利标题（中）： 半导体发光器件
-
申请号： US432359申请日： 1989-11-06
-
公开(公告)号： US4967241A公开(公告)日： 1990-10-30
- 发明人: Hideaki Kinoshita , Toshiaki Tanaka
- 申请人： Hideaki Kinoshita , Toshiaki Tanaka
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX60-61480 19850326
- 主分类号： G02B6/42
- IPC分类号： G02B6/42 ; H01L31/12 ; H01L33/14 ; H01L33/20 ; H01L33/30 ; H01L33/40 ; H01S5/00 ; H01S5/026 ; H01S5/183
摘要：
A semiconductor light emitting device has a semiconductor light emitting element section and an n-type semiconductor substrate with a through hole which serves as a window through which light generated by the semiconductor light emitting element section is emitted. The device further includes a p-type region formed in the semiconductor substrate and facing the through hole. The p-type region and the semiconductor substrate constitute a photodiode.
公开/授权文献
信息查询
