发明授权
- 专利标题: Method for fabricating devices and devices formed thereby
- 专利标题(中): 用于制造由此形成的器件和器件的方法
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申请号: US193179申请日: 1988-05-05
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公开(公告)号: US4968644A公开(公告)日: 1990-11-06
- 发明人: Patrick K. Gallagher , Martin L. Green , Roland A. Levy
- 申请人: Patrick K. Gallagher , Martin L. Green , Roland A. Levy
- 申请人地址: NJ Murray Hill
- 专利权人: AT&T Bell Laboratories
- 当前专利权人: AT&T Bell Laboratories
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L21/285
- IPC分类号: H01L21/285
摘要:
A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.
公开/授权文献
- US6123151A Valve for use in a subsea drilling riser 公开/授权日:2000-09-26