公开(公告)号：US4968644A

公开(公告)日：1990-11-06

申请号：US193179

申请日：1988-05-05

申请人： Patrick K. Gallagher ,  Martin L. Green ,  Roland A. Levy

发明人： Patrick K. Gallagher ,  Martin L. Green ,  Roland A. Levy

IPC分类号： H01L21/285

CPC分类号： H01L21/28556

摘要： A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.

摘要翻译： 公开了一种用于制造例如半导体器件的器件的方法，其包括使至少两个反应性实体反应以在被处理或未加工的衬底的区域上形成含金属材料的步骤。 在该方法中固有的是认识到，一个反应性实体将经常与基底材料反应以产生先前未被认识和非常不期望的结果，例如先前制造的器件部件的几乎完全的侵蚀。 因此，根据本发明的方法，采用各种技术中的任一种来降低基材和与该材料反应的物质之间的反应速率，同时避免两个实体之间的反应速率的显着降低。

公开(公告)号：US4716050A

公开(公告)日：1987-12-29

申请号：US928744

申请日：1986-11-10

申请人： Martin L. Green ,  Roland A. Levy ,  Ralph G. Nuzzo

发明人： Martin L. Green ,  Roland A. Levy ,  Ralph G. Nuzzo

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/20 ,  H01L21/285 ,  H01L21/3205 ,  B05D5/12

CPC分类号： C23C16/04 ,  C23C16/20 ,  H01L21/28556 ,  H01L21/32051

摘要： Chemical vapor deposition of an aluminum layer on a substrate is facilitated by surface activation prior to deposition. Surface activation is at relatively low temperature and results in a hydrated surface; low temperature surface activation is advantageous in the interest of keeping deposition apparatus free of additional chemicals, and substrates activated in this manner may be stored for considerable lengths of time prior to aluminum deposition. Among suitable activating agents are organochromium, organosilane, and organoaluminum compounds.

摘要翻译： 在沉积之前通过表面活化来促进铝层在基底上的化学气相沉积。 表面活化处于相对较低的温度，导致水合表面; 低温表面活化有利于保持沉积设备不含附加的化学物质，并且以这种方式活化的底物可以在铝沉积之前储存相当长的时间。 合适的活化剂中有有机铬，有机硅烷和有机铝化合物。

公开(公告)号：US4851895A

公开(公告)日：1989-07-25

申请号：US59210

申请日：1987-06-03

申请人： Martin L. Green ,  Michal E. Gross

发明人： Martin L. Green ,  Michal E. Gross

IPC分类号： H01L23/532

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.

摘要翻译： 使用钌作为金属化材料的集成器件的金属化导致源极和漏极区以及栅极氧化物的良好粘合接触。 钌类似地适合于例如硅和铝之间的扩散阻挡金属化，以及作为互连金属化材料。 并且，作为扩散阻挡材料，可以使用二氧化钌。

公开(公告)号：US06797525B2

公开(公告)日：2004-09-28

申请号：US10151887

申请日：2002-05-22

申请人： Martin L. Green ,  Glen D. Wilk

发明人： Martin L. Green ,  Glen D. Wilk

IPC分类号： H01L2100

CPC分类号： H01L21/28185 ,  H01L21/02178 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31616 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO/SiO2 and at or above the thermodynamic chemical equilibrium of the metal oxide layer.

摘要翻译： 公开了一种形成退火的高K金属氧化物晶体管栅极结构的方法。 在半导体衬底上形成金属氧化物层。 金属氧化物层在氧气氛中进行缓冲退火处理，以在SiO 2 / SiO 2的热力学化学平衡或等于或高于金属氧化物层的热力学化学平衡处退火金属氧化物层。

公开(公告)号：US5442205A

公开(公告)日：1995-08-15

申请号：US104513

申请日：1993-08-09

申请人： Daniel Brasen ,  Eugene A. Fitzgerald, Jr. ,  Martin L. Green ,  Donald P. Monroe ,  Paul J. Silverman ,  Ya-Hong Xie

发明人： Daniel Brasen ,  Eugene A. Fitzgerald, Jr. ,  Martin L. Green ,  Donald P. Monroe ,  Paul J. Silverman ,  Ya-Hong Xie

IPC分类号： H01L21/20 ,  H01L21/335 ,  H01L21/8258 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/8258 ,  H01L27/15 ,  H01L29/66431 ,  H01L33/385

摘要： A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge.sub.x Si.sub.1-x epitaxial layer overlain by a ungraded Ge.sub.x.sbsb.0 Si.sub.1-x.sbsb.0 intervening between the silicon substrate and the strained layer. Such a heterostructure can serve as a foundation for such devices as surface emitting LEDs, either n-channel or p-channel silicon-based MODFETs, and either n-channel or p-channel silicon-based MOSFETs.

摘要翻译： 异质结构包括位于硅衬底上的硅或锗的染色外延层，空间分级的GexSi1-x外延层被介于硅衬底和应变层之间的未分级的Gex0Si1-x0覆盖。 这种异质结构可以作为诸如表面发射LED，n沟道或p沟道硅基MODFET以及n沟道或p沟道硅基MOSFET的器件的基础。

公开(公告)号：US5861651A

公开(公告)日：1999-01-19

申请号：US807209

申请日：1997-02-28

申请人： Daniel Brasen ,  Eric L. Garfunkel ,  Martin L. Green ,  Evgeni Petrovich Gusev

发明人： Daniel Brasen ,  Eric L. Garfunkel ,  Martin L. Green ,  Evgeni Petrovich Gusev

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L28/40 ,  H01L29/4916 ,  H01L29/518

摘要： In accordance with the invention an electronic device is provided with a thin film dielectric layer of enhanced reliability. The dielectric comprises a thin film of silicon oxide having maximum concentrations of nitrogen near its major interfaces. In a field effect device, the maximum adjacent the gate enhances resistance to penetration of dopants from the gate. The secondary maximum near the channel enhances resistance to current stress. The maximum near the channel is preferably displaced slightly inward from the channel to minimize effects on carrier mobility.

摘要翻译： 根据本发明，电子设备具有增强的可靠性的薄膜电介质层。 电介质包括在主要界面附近具有最大氮浓度的氧化硅薄膜。 在场效应器件中，与栅极相邻的最大值增强了对来自栅极的掺杂剂穿透的抵抗力。 通道附近的次级极大增强了对电流应力的抵抗力。 通道附近的最大值最好从通道略微向内移动，以最小化对载流子迁移率的影响。

公开(公告)号：US4401482A

公开(公告)日：1983-08-30

申请号：US328231

申请日：1981-12-07

申请人： Martin L. Green ,  Richard C. Sherwood

发明人： Martin L. Green ,  Richard C. Sherwood

IPC分类号： B22F1/00 ,  C22C33/02 ,  H01F1/08 ,  H01F1/02

CPC分类号： H01F1/086 ,  B22F1/0003 ,  C22C33/0285

摘要： Fe--Cr--Co alloys have found application in the manufacture of permanent magnets on account of magnetic properties such as, high coercive force, remanent magnetization, and energy product. A method is disclosed for producing magnetic articles comprising Fe, Cr, and Co from powders comprising elemental or pre-alloyed particles. A powder is mixed with an essentially noncarbonizing organic binder, compressed, heated to remove binder, sintered, and aged. Heating results in essentially complete removal of binder prior to sintering.Magnetic bodies produced according to the disclosed method typically comprise less than 1 weight percent of undesirable nonmagnetic phases and have a maximum energy product of at least 1 million gauss oersted.

摘要翻译： Fe-Cr-Co合金已经由于磁性能如矫顽力，剩余磁化强度和能量积等因素而被用于制造永磁体。 公开了用于由包含元素或预合金化颗粒的粉末制造包含Fe，Cr和Co的磁性制品的方法。 将粉末与基本上不含碳的有机粘合剂混合，压缩，加热以除去粘合剂，烧结和老化。 加热导致在烧结之前基本上完全去除粘合剂。 根据所公开的方法生产的磁体通常包含小于1重量％的不期望的非磁性相，并且具有至少100万高斯奥斯特的最大能量乘积。

公开(公告)号：US4311537A

公开(公告)日：1982-01-19

申请号：US142633

申请日：1980-04-22

申请人： Gilbert Y. Chin ,  Martin L. Green ,  Richard C. Sherwood ,  Jack H. Wernick

发明人： Gilbert Y. Chin ,  Martin L. Green ,  Richard C. Sherwood ,  Jack H. Wernick

IPC分类号： C21D1/04 ,  C21D6/00 ,  H01F1/04

CPC分类号： C21D6/002 ,  C21D1/04 ,  H01F1/04

摘要： In view of rising cobalt costs, low-cobalt alloys such as, e.g., Fe-Cr-Co alloys are finding increasing use in the manufacture of permanent magnets. Desired magnetic energy product of such magnets is typically at least 1 million gauss-oersted.In the interest of maximizing magnetic energy product per unit weight cobalt, low-cobalt Fe-Cr-Co alloys are processed by solidifying a bulk object from a melt, annealing, quenching, and aging by cooling at rates in a range of 0.1 to 2 degrees C. per hour in a magnetic field. Cold working prior to aging may be used to further enhance magnetic energy product.Resulting magnets have optimized maximum magnetic energy product (BH).sub.max per unit weight cobalt comprised in an alloy.

摘要翻译： 考虑到钴成本上升，低钴合金例如Fe-Cr-Co合金在制造永久磁铁方面越来越多的应用。 这种磁铁的期望磁能积通常至少为100万高斯奥斯特。 为了最大限度地提高每单位重量钴的磁能产物，低钴Fe-Cr-Co合金通过使熔体固化，退火，淬火和老化，以0.1至2的速率冷却来处理 在磁场中每小时摄氏C. 老化前的冷加工可用于进一步增强磁能产品。 所得磁体已经优化了合金中包含的每单位重量钴的最大磁能积（BH）最大值。

公开(公告)号：US07223677B2

公开(公告)日：2007-05-29

申请号：US10876183

申请日：2004-06-24

申请人： Martin Michael Frank ,  Yves Chabal ,  Glen David Wilk ,  Martin L. Green

发明人： Martin Michael Frank ,  Yves Chabal ,  Glen David Wilk ,  Martin L. Green

IPC分类号： H01L21/20

CPC分类号： H01L29/513 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/31683 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/517

摘要： The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

摘要翻译： 本发明提供一种半导体器件的制造方法，该半导体器件包括绝缘层，该绝缘层包括形成在硅衬底上的晶种层。 通过在基本上无氧的环境中将硅衬底的氢封端的表面暴露于包含甲基化金属的种子层前体而形成种子层。 形成绝缘层还包括在种子层上沉积电介质材料。

公开(公告)号：US5221413A

公开(公告)日：1993-06-22

申请号：US690429

申请日：1991-04-24

申请人： Daniel Brasen ,  Eugene A. Fitzgerald, Jr. ,  Martin L. Green ,  Ya-Hong Xie

发明人： Daniel Brasen ,  Eugene A. Fitzgerald, Jr. ,  Martin L. Green ,  Ya-Hong Xie

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/335 ,  H01L21/8258 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/8258 ,  H01L27/15 ,  H01L29/66431 ,  H01L33/385 ,  Y10S438/938

摘要： The present invention is predicated upon the discovery by applicants that by growing germanium-silicon alloy at high temperatures in excess of about 850.degree. C. and increasing the germanium content at a gradient of less than about 25% per micrometer, one can grow on silicon large area heterostructures of graded Ge.sub.x Si.sub.1-x alloy having a low level of threading dislocation defects. With low concentrations of germanium 0.10.ltoreq..times..ltoreq.0.50), the heterolayer can be used as a substrate for growing strained layer silicon devices such as MODFETS. With high concentrations of Ge (0.65.ltoreq..times..ltoreq.1.00) the heterolayer can be used on silicon substrates as a buffer layer for indium gallium phosphide devices such as light emitting diodes and lasers. At concentrations of pure germanium (X=1.00), the heterolayer can be used for GaAs or GaAs/AlGaAs devices.