发明授权
US4975387A Formation of epitaxial si-ge heterostructures by solid phase epitaxy
失效
通过固相外延形成外延Si-Ge异质结构
- 专利标题： Formation of epitaxial si-ge heterostructures by solid phase epitaxy
- 专利标题（中）： 通过固相外延形成外延Si-Ge异质结构
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申请号： US450963申请日： 1989-12-15
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公开(公告)号： US4975387A公开(公告)日： 1990-12-04
- 发明人: Sharka M. Prokes , Wen F. Tseng , Aristos Christou
- 申请人： Sharka M. Prokes , Wen F. Tseng , Aristos Christou
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.
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