发明授权
- 专利标题: Direct-heated cathode structure and method for the fabrication thereof
- 专利标题(中): 直热阴极结构及其制造方法
-
申请号: US430729申请日: 1989-11-02
-
公开(公告)号: US4976643A公开(公告)日: 1990-12-11
- 发明人: Seung J. Lee
- 申请人: Seung J. Lee
- 申请人地址: KRX
- 专利权人: Samsung Electron Devices Co., Ltd.
- 当前专利权人: Samsung Electron Devices Co., Ltd.
- 当前专利权人地址: KRX
- 主分类号: H01J1/18
- IPC分类号: H01J1/18
摘要:
Method of fabricating a direct-heated cathode structure comprising prepunching process wherein fixing segments are inserted to slot in the ceramic base and bended about 45, and finish punching process wherein upper end of prepunched fixing segments are pressed over the ceramic base. Direct-heated cathode structure comprising supporting bars with a supporting protuberance at their upper end and a barricade at their middle to prevent deformation during welding of springs and to confine affection of buckling during electric resistance welding of conductive tape respectively.
公开/授权文献
信息查询