发明授权
- 专利标题: Metallization layer structure formed on aluminum nitride ceramics and method of producing the metallization layer structure
- 专利标题(中): 在氮化铝陶瓷上形成的金属化层结构和金属化层结构的制造方法
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申请号: US235595申请日: 1988-08-24
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公开(公告)号: US4980239A公开(公告)日: 1990-12-25
- 发明人: Shigeki Harada , Masahiro Sugimoto
- 申请人: Shigeki Harada , Masahiro Sugimoto
- 申请人地址: JPX Kanagawa
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX62-213319 19870827
- 主分类号: C23C14/06
- IPC分类号: C23C14/06 ; C04B41/51 ; C04B41/52 ; C04B41/89 ; C23C14/14 ; C23C14/18 ; C23C14/58 ; H01L23/10 ; H05K1/03 ; H05K3/38
摘要:
A metallization layer structure includes an intermediate layer formed on an aluminum nitride ceramics base. The intermediate layer contains aluminum titanium nitride. A titanium layer is formed on the intermediate layer. A heat-resistant metallic layer is formed on the titanium layer. A metallic layer for facilitating soldering or brazing is formed on the heat-resistant metallic layer.