发明授权
- 专利标题: Method and apparatus for testing integrated electronic device
- 专利标题(中): 集成电子设备测试方法和装置
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申请号: US166763申请日: 1988-03-03
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公开(公告)号: US4980639A公开(公告)日: 1990-12-25
- 发明人: Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
- 申请人: Masahiro Yoshizawa , Akira Kikuchi , Kou Wada , Minpei Fujinami , Nobuo Shimazu
- 申请人地址: JPX
- 专利权人: Nippon Telegraph and Telephone Public Corporation
- 当前专利权人: Nippon Telegraph and Telephone Public Corporation
- 当前专利权人地址: JPX
- 优先权: JPX60-48070 19850311; JPX60-129937 19850617; JPX60-177338 19850812
- 主分类号: G01Q30/02
- IPC分类号: G01Q30/02 ; G01Q30/04 ; G01Q80/00 ; G01Q90/00 ; G01R31/305
摘要:
A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.
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