发明授权
- 专利标题： MO/TI Contact to silicon
- 专利标题（中）： MO / TI接触硅
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申请号： US445130申请日： 1989-11-30
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公开(公告)号： US4981816A公开(公告)日： 1991-01-01
- 发明人: Manjin J. Kim , Dale M. Brown
- 申请人： Manjin J. Kim , Dale M. Brown
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/3213 ; H01L21/768 ; H01L23/532
摘要：
A metal for fabricating contact structures through via openings in VLSI circuits employs a dual layer of refractory metal. A thin titanium layer is deposited, over which a molybdenum layer is formed. An annealing treatment further improves contact resistance characteristics. The method results in a contact structure which exhibits desirable properties of thermal compatibility, step coverage, contact resistance and improved processing characteristics.
公开/授权文献
- US5607400A Pre-fillable syringe and stopper assembly therefor 公开/授权日：1997-03-04
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