发明授权
US4987311A Electron-detector diode biassing scheme for improved writing by an
electron beam lithography machine
失效
电子检测器二极管偏置方案，用于改进电子束光刻机的写入
- 专利标题： Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
- 专利标题（中）： 电子检测器二极管偏置方案，用于改进电子束光刻机的写入
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申请号： US391202申请日： 1989-08-08
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公开(公告)号： US4987311A公开(公告)日： 1991-01-22
- 发明人: William J. Devore
- 申请人： William J. Devore
- 申请人地址： CA Hayward
- 专利权人： Etec Systems, Inc.
- 当前专利权人： Etec Systems, Inc.
- 当前专利权人地址： CA Hayward
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01J37/244 ; H01J37/317 ; H01L21/30
摘要：
Disclosed is a biassing scheme for a beam position location apparatus (50) which comprises electron detector diodes (52) in an electron beam lithography machine (10) such that the detector diodes (52) deposit fewer secondary electrons (62) on a substrate (16) being processed by the electron beam (22) and thus reduce or eliminate any charge buildup on said substrate which deflect the electron beam (22) causing pattern distortion.
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