公开(公告)号：US6157039A

公开(公告)日：2000-12-05

申请号：US74558

申请日：1998-05-07

申请人： Marian Mankos

发明人： Marian Mankos

IPC分类号： G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/153 ,  H01J37/147

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1514 ,  H01J2237/31774

摘要： A charged particle beam column efficiently illuminates a blanking aperture array by splitting a charged particle beam into multiple charged particle beams and focusing each charge particle beam on a separate aperture of the blanking aperture array. Where an electron source with a small effective source size is used, for example an electron field emission source or Schottky source, crossovers of the individual beams may occur within the separate apertures of the blanking aperture array. Consequently, no demagnification of the beams passing through the blanking aperture array is necessary to form a small exposure pixel on the writing plane. Thus, for example, electron-electron interactions are minimized, thereby increasing throughput of the system. Further, undesirable scattering of the charged particle off the edge or sidewall of the apertures of the blanking aperture array is avoided. Moreover, regardless of the type of source used, by focusing each individual charged particle beam on the separate apertures of the blanking aperture array, the charged particle beam column minimizes undesirable heating, thermal drift or charging of the blanking aperture array.

摘要翻译： 带电粒子束柱通过将带电粒子束分成多个带电粒子束并且将每个电荷粒子束聚焦在消隐孔阵列的单独孔上来有效地照射消隐孔径阵列。 在使用具有小的有效源尺寸的电子源的情况下，例如电子场发射源或肖特基源，各个光束的交叉可以发生在消隐孔阵列的分开的孔内。 因此，不需要通过消隐孔阵列的光束的缩小以在书写平面上形成小的曝光像素。 因此，例如，电子 - 电子相互作用最小化，从而增加系统的生产量。 此外，避免了带电粒子从消隐孔阵列的孔的边缘或侧壁的不期望的散射。 而且，无论使用的源的种类如何，通过将每个单独的带电粒子束聚焦在消隐孔径阵列的分开的孔上，带电粒子束列使消隐孔阵列的不期望的加热，热漂移或充电最小化。

公开(公告)号：US5959606A

公开(公告)日：1999-09-28

申请号：US327581

申请日：1994-10-24

申请人： Allan L. Goodman ,  Morris H. Green ,  Matthew J. Jolley ,  Robin L. Teitzel ,  John L. Wipfli

发明人： Allan L. Goodman ,  Morris H. Green ,  Matthew J. Jolley ,  Robin L. Teitzel ,  John L. Wipfli

IPC分类号： G11C11/401 ,  G03F1/00 ,  G06F17/50 ,  G09G5/393 ,  G09G5/399 ,  G09G5/36

CPC分类号： G03F1/00 ,  G09G5/393

摘要： A rasterizer, particularly suited for generating patterns for semiconductor masks and the like is described. An 8.times.8 array uses RAS, CAS and WE signals in addition to the memory address for accessing the array. A state machine is used to convert the pattern data (e.g., type of object orientation, etc.) into accessing data with the WE generator being driven through a ROM.

摘要翻译： 描述了特别适用于生成半导体掩模等的图案的光栅化器。 8x8阵列除了用于访问阵列的存储器地址之外还使用RAS，CAS和WE信号。 使用状态机将图形数据（例如，对象方向的类型等）转换为通过ROM驱动WE生成器的访问数据。

公开(公告)号：US5276330A

公开(公告)日：1994-01-04

申请号：US706612

申请日：1991-05-29

申请人： Mark Gesley

发明人： Mark Gesley

IPC分类号： H01J9/44 ,  H01J37/04 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  H01J37/147

CPC分类号： H01J37/045

摘要： The accuracy of a double-deflection beam blanker is dramatically improved for all blanker voltages by using provided, closed-form, trajectory equations to determine the blanker geometric parameters and compensating for fringe-field effects in order to precisely determine the delay line length for control of an electron or ion beam. This delay line length is maintained by placing alignment apertures above and below the blanker.

摘要翻译： 通过使用提供的封闭形式的轨迹方程来确定双边偏转光束消隐器的准确度，可以显着提高所有消隐器电压，以确定消隐器几何参数并补偿边缘场效应，以精确确定控制的延迟线长度 的电子或离子束。 该延迟线长度通过在消隐器上方和下方放置对准孔来维持。

公开(公告)号：US5227839A

公开(公告)日：1993-07-13

申请号：US720205

申请日：1991-06-24

申请人： Paul C. Allen

发明人： Paul C. Allen

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70058 ,  G03F7/70258 ,  G03F7/70358 ,  G03F7/70475 ,  G03F7/70725

摘要： A method and apparatus for printing arbitrarily large circuit patterns using small field optics. The use of small field imaging optics allows the use of high NA lens designs capable of printing smaller geometries than otherwise would be possible. The field size in a first axis is extended by scanning an object and image past the lens; the field size in a second axis is extended by stitching the scans together in an overlapped fashion. This overlapped printing technique averages many random and systematic errors and allows the placement of field adjacencies within die boundaries. The effective field size of such a system is limited only be reticle size and stage mechanics. The apparatus further includes error correction loops for enhancing stage synchronization accuracy and for reducing field adjacency errors.

摘要翻译： 一种用于使用小场光学器件打印任意大的电路图案的方法和装置。 使用小场成像光学器件允许使用能够打印更小几何形状的高NA透镜设计，否则将是可能的。 通过扫描物体和图像通过镜头来延长第一轴中的场尺寸; 通过以重叠的方式将扫描拼接在一起来扩展第二轴中的场尺寸。 这种重叠的印刷技术平均许多随机和系统误差，并允许在模具边界内放置场邻接。 这种系统的有效场大小仅限于标线尺寸和阶段力学。 该装置还包括用于增强级同步精度和减少场邻接误差的纠错环。

公开(公告)号：US6077417A

公开(公告)日：2000-06-20

申请号：US195843

申请日：1998-11-19

申请人： Kim Y. Lee ,  T. H. Philip Chang ,  Ho-Seob Kim

发明人： Kim Y. Lee ,  T. H. Philip Chang ,  Ho-Seob Kim

IPC分类号： G01N20060101 ,  G01N13/12 ,  G01N30/00 ,  G12B21/00 ,  H01J37/12 ,  H01J37/26

CPC分类号： B82Y15/00

摘要： A method and system for cleaning the silicon microlenses in an electron-beam microcolumn in situ. The microlenses individually are heated by passing a current through each microlens. The current is utilized to heat the microlens to at least two hundred degrees Centigrade to prevent contamination and occasionally to a temperature on the order of six to seven hundred degrees Centigrade to remove any builtup or potential contamination.

摘要翻译： 一种电子束微柱原位清洗硅微透镜的方法和系统。 通过使电流通过每个微透镜来单独地加热微透镜。 该电流用于将微透镜加热至至少二百摄氏度以防止污染，并且偶尔达到六至七百摄氏度的温度以除去任何积聚或潜在的污染物。

公开(公告)号：US6037967A

公开(公告)日：2000-03-14

申请号：US769169

申请日：1996-12-18

申请人： Paul C. Allen ,  Eugene Mirro

发明人： Paul C. Allen ,  Eugene Mirro

IPC分类号： B23K26/06 ,  B23K26/08 ,  G02B26/10 ,  G02B26/12 ,  G03F7/20 ,  H01L21/027 ,  H01S3/10 ,  H04N1/40 ,  B41J2/435

CPC分类号： H04N1/40037 ,  B23K26/032 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/08 ,  B23K26/082 ,  B23K26/0821 ,  G02B26/12 ,  G03F7/2053 ,  G03F7/704 ,  H01L21/0275

摘要： A laser pattern generator for semiconductor mask making or direct writing of features on a semiconductor wafer uses a pulsed laser source to achieve high power and short wavelength (e.g. 263 nm or less) radiation, for writing very small-sized features. The laser pulse frequency is either synchronous or asynchronous to the writing grid of the features being written, in various embodiments.

摘要翻译： 用于半导体掩模制造或直接写入半导体晶片上的特征的激光图案发生器使用脉冲激光源实现高功率和短波长（例如263nm或更小）辐射，用于写入非常小尺寸的特征。 在各种实施例中，激光脉冲频率与被写入的特征的写入网格同步或异步。

公开(公告)号：US6011269A

公开(公告)日：2000-01-04

申请号：US58258

申请日：1998-04-10

申请人： Lee H. Veneklasen ,  Tai-Hon P. Chang ,  Marian Mankos

发明人： Lee H. Veneklasen ,  Tai-Hon P. Chang ,  Marian Mankos

IPC分类号： G03F1/08 ,  G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

摘要： A shaped electron beam column focuses electrons from an electron source to produce a shadow image of a shaped aperture on a writing plane. The shadow image of the shaped aperture is the defocused image of a shape aperture. This defocused shadow image is in the the object plane of the shaped electron beam column. The shadow image in the writing plane is defocused because an electron beam lens produces a focused image of the electron source off the writing plane. The size of the shadow image on the writing plane may be altered by adjusting the electron beam lens to change the distance between the electron source image and the writing plane, i.e., defocus. Thus, a relatively large shaped aperture may be used in comparison to shaped apertures used in conventional electron beam columns. Further, only a small total linear demagnification may be used, which permits the length of the shaped electron beam column to be decreased. Consequently, the electron-electron interactions are reduced resulting in increased edge resolution of the image on the writing plane and increased current in the shaped electron beam column thereby increasing throughput.

摘要翻译： 成形的电子束列聚焦来自电子源的电子，以在写入平面上产生成形孔的阴影图像。 成形孔的阴影图像是形状孔径的散焦图像。 该散焦的阴影图像位于成形电子束列的物平面内。 写入平面中的阴影图像散焦，因为电子束透镜产生离开写入平面的电子源的聚焦图像。 可以通过调整电子束透镜来改变电子源图像与书写平面之间的距离，即散焦，来改变写入平面上的阴影图像的大小。 因此，与常规电子束柱中使用的成形孔相比，可以使用相对大的成形孔。 此外，可以仅使用小的总线性缩小，这允许成形的电子束柱的长度减小。 因此，电子 - 电子相互作用减小，从而增加了写入平面上图像的边缘分辨率，并增加了成形电子束列中的电流，从而提高了产量。

公开(公告)号：US5847959A

公开(公告)日：1998-12-08

申请号：US789246

申请日：1997-01-28

申请人： Lee H. Veneklasen ,  Robert Innes ,  Sergey Babin ,  David Trost ,  Jeffrey Varner

发明人： Lee H. Veneklasen ,  Robert Innes ,  Sergey Babin ,  David Trost ,  Jeffrey Varner

IPC分类号： H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  G06F11/00 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  Y10S430/143

摘要： An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.

摘要翻译： 一种电子束图案生成系统，用于使用光栅扫描方法在衬底上曝光图案。 系统将图案的光栅化表示存储为多个规则像素剂量曝光水平。 这些像素剂量暴露水平由系统评估一个或多个邻近效应，并且计算对剂量暴露水平和/或像素位置的校正。 该系统包括用于根据需要计算和存储中间和最终结果的装置。 当它们被计算时，校正被提供给曝光剂量调制器，其中它们被应用于形成图案。 因此，由于电子散射和加热以及由于全局热膨胀引起的邻近效应，对长距离和短距离邻近效应的校正可以在运行时间和校正图案暴露期间被计算和提供。

公开(公告)号：US5246800A

公开(公告)日：1993-09-21

申请号：US759553

申请日：1991-09-12

申请人： Andrew J. Muray

发明人： Andrew J. Muray

IPC分类号： G03F1/28 ,  H01L21/027

CPC分类号： G03F1/28

摘要： A method and apparatus for photolithographically fabricating features on a very large scale integrated circuit wafer by use of a phase shift mask defining discrete regions. This overcomes the problems of intensity nulls at the junction of regions formed by portions of the mask having opposite phase. The mask includes a transition region defining three phases which are assigned to pixels in the transition region, such that the phase assignment of the pixels is synthesized from an algorithm taking into account optical resolution and depth of focus. Each pixel is assigned one of three discrete phases, which thereby creates a transition region simulating a ramp between the two regions of opposite phases, such that intensity variation of the optical image corresponding to the transition region is minimized.

公开(公告)号：US6023060A

公开(公告)日：2000-02-08

申请号：US34893

申请日：1998-03-03

申请人： Tai-Hon P. Chang ,  Ho-Seob Kim

发明人： Tai-Hon P. Chang ,  Ho-Seob Kim

IPC分类号： H01J37/26 ,  G01Q30/02 ,  G01Q30/20 ,  G01Q70/08 ,  G01S19/04 ,  G01S19/13 ,  H01J37/16 ,  H01J37/28 ,  H01J3/14 ,  G21K7/00

CPC分类号： H01J37/28 ,  H01J2237/1205

摘要： A charged particle-beam microcolumn, which for example may be used for charged particle microscopy, with a T-shape configuration has a relatively narrow base structure supporting the beam forming charged particle optical column. The narrow base structure permits the T-shaped microcolumn and sample to be positioned at an angle other than normal with respect to each other, which allows generation of three-dimensional-like images of the sample surface. Thus, the incidence angle of the charged particle beam generated by the T-shaped microcolumn may be varied while a short working distance is maintained. A conventional secondary/backscattered charged particle detector may be used because the reflected angle of the charged particles allows a charged particle detector to be separated from the T-shaped microcolumn. Further, the small size of the T-shaped microcolumn permits observation of different parts of a large stationary sample by moving the T-shaped microcolumn with respect to the sample. Moreover, multiple T-shaped microcolumns may be arrayed to improve throughput.

摘要翻译： 具有T形构造的例如可用于带电粒子显微镜的带电粒子束微柱具有支撑束形成带电粒子光学柱的相对狭窄的基底结构。 狭窄的基部结构允许T形微柱和样品相对于彼此以正常的角度定位，这允许产生样品表面的三维样图像。 因此，由T形微柱产生的带电粒子束的入射角可以变化，同时保持短的工作距离。 可以使用常规的二次/反向散射带电粒子检测器，因为带电粒子的反射角允许带电粒子检测器与T形微柱分离。 此外，T形微柱的小尺寸允许通过相对于样品移动T形微柱来观察大的固定样品的不同部分。 此外，可以排列多个T形微柱以提高产量。