发明授权
- 专利标题: Semiconductor device, manufacturing method, and system
- 专利标题(中): 半导体器件,制造方法和系统
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申请号: US445898申请日: 1989-12-01
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公开(公告)号: US4988642A公开(公告)日: 1991-01-29
- 发明人: Shunpei Yamazaki
- 申请人: Shunpei Yamazaki
- 申请人地址: JPX Kanagawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 主分类号: C23C16/54
- IPC分类号: C23C16/54 ; H01L21/00 ; H01L21/205 ; H01L31/20
摘要:
An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed of a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
公开/授权文献
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