发明授权
US4989182A Dynamic random access memory having dummy word line for facilitating
reset of row address latch
失效
具有虚拟字线的动态随机存取存储器，以便于行地址锁存器的复位
- 专利标题： Dynamic random access memory having dummy word line for facilitating reset of row address latch
- 专利标题（中）： 具有虚拟字线的动态随机存取存储器，以便于行地址锁存器的复位
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申请号： US254153申请日： 1988-10-06
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公开(公告)号： US4989182A公开(公告)日： 1991-01-29
- 发明人: Hirohiko Mochizuki , Tsuyoshi Ohira , Yukinori Kodama , Meiko Kobayashi , Takaaki Furuyama
- 申请人： Hirohiko Mochizuki , Tsuyoshi Ohira , Yukinori Kodama , Meiko Kobayashi , Takaaki Furuyama
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-251983 19871006
- 主分类号： G11C11/407
- IPC分类号： G11C11/407 ; G11C8/14 ; G11C8/18 ; G11C11/408 ; G11C11/409
摘要：
A dynamic random access memory includes a dummy word line which has an electrical characteristic identical to that of an actual word line. The dummy word line is charged up and is then discharged as in case of the actual word line. A latched row address in a row address latch circuit is reset when the potential of the dummy word line becomes equal to a predetermined low potential due to the discharge operation for the dummy word line.
公开/授权文献
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