专利检索 ap:("Hirohiko Mochizuki" OR "Tsuyoshi Ohira" OR "Yukinori Kodama" OR "Meiko Kobayashi" OR "Takaaki Furuyama") AND inv:"Meiko Kobayashi" 第 1 页

1.

发明授权
Dynamic random access memory having dummy word line for facilitating reset of row address latch 失效
标题翻译：具有虚拟字线的动态随机存取存储器，以便于行地址锁存器的复位

公开(公告)号：US4989182A

公开(公告)日：1991-01-29

申请号：US254153

申请日：1988-10-06

申请人： Hirohiko Mochizuki , Tsuyoshi Ohira , Yukinori Kodama , Meiko Kobayashi , Takaaki Furuyama

发明人： Hirohiko Mochizuki , Tsuyoshi Ohira , Yukinori Kodama , Meiko Kobayashi , Takaaki Furuyama

IPC分类号： G11C11/407 , G11C8/14 , G11C8/18 , G11C11/408 , G11C11/409

CPC分类号： G11C8/18 , G11C11/408 , G11C8/14

摘要： A dynamic random access memory includes a dummy word line which has an electrical characteristic identical to that of an actual word line. The dummy word line is charged up and is then discharged as in case of the actual word line. A latched row address in a row address latch circuit is reset when the potential of the dummy word line becomes equal to a predetermined low potential due to the discharge operation for the dummy word line.