发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US296861申请日： 1989-01-13
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公开(公告)号： US4990978A公开(公告)日： 1991-02-05
- 发明人: Hisao Kondoh
- 申请人： Hisao Kondoh
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-142713 19870608
- 主分类号： H01L29/68
- IPC分类号： H01L29/68 ; H01L27/04 ; H01L29/739 ; H01L29/78
摘要：
A semiconductor substrate is provided thereon with an insulated gate bipolar transistor which is a composite element of a pnpn thyristor and an N-channel MOS-FET. In order to monitor operating current of the insulated gate bipolar transistor, a monitor terminal is provided in addition to collector, emitter and gate terminals. The operating current of the insulated gate bipolar transistor is monitored through the monitor terminal to perform appropriate protective operation when the operating current reaches a critical region, thereby to prevent occurrence of a latch-up phenomenon.
公开/授权文献
- US4488096A Speed control for a rotary machine 公开/授权日：1984-12-11
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