发明授权
US4990983A Radiation hardened field oxides for NMOS and CMOS-bulk and process for
forming
失效
用于NMOS和CMOS体的辐射硬化场氧化物和成型工艺
- 专利标题： Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming
- 专利标题（中）： 用于NMOS和CMOS体的辐射硬化场氧化物和成型工艺
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申请号： US130914申请日： 1987-12-07
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公开(公告)号： US4990983A公开(公告)日： 1991-02-05
- 发明人: Frank Z. Custode , John G. Poksheva
- 申请人： Frank Z. Custode , John G. Poksheva
- 申请人地址： CA El Segundo
- 专利权人： Rockwell International Corporation
- 当前专利权人： Rockwell International Corporation
- 当前专利权人地址： CA El Segundo
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/092
摘要：
The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.
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