发明授权
US4992301A Chemical vapor deposition apparatus for obtaining high quality epitaxial
layer with uniform film thickness
失效
用于获得具有均匀膜厚度的高质量外延层的化学气相沉积设备
- 专利标题： Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
- 专利标题（中）： 用于获得具有均匀膜厚度的高质量外延层的化学气相沉积设备
-
申请号： US247850申请日： 1988-09-22
-
公开(公告)号： US4992301A公开(公告)日： 1991-02-12
- 发明人: Seiichi Shishiguchi , Fumitoshi Toyokawa , Masao Mikami
- 申请人： Seiichi Shishiguchi , Fumitoshi Toyokawa , Masao Mikami
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-239603 19870922; JPX62-239605 19870922; JPX62-239607 19870922; JPX62-247176 19870929; JPX63-62553 19880315
- 主分类号： C30B25/12
- IPC分类号： C30B25/12 ; C30B25/14
摘要：
A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube, the substrate-holder holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means for heating the substrates, a first gas-supply nozzle tube installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.
信息查询
IPC分类:
