公开(公告)号：US20250059679A1

公开(公告)日：2025-02-20

申请号：US18799560

申请日：2024-08-09

Applicant: Resonac Corporation

Inventor： Marusu KATADA ,  Naoto ISHIBASHI

IPC: C30B29/36 ,  C30B25/12 ,  C30B25/14 ,  H01L21/02 ,  H01L29/16

Abstract: A SiC epitaxial wafer (1) of the present invention is a SiC epitaxial wafer having a SiC epitaxial film (E) on a main surface of a SiC single crystal substrate (W), in which an orientation flat or a notch is provided thereon, a height (h) of an epi crown (Ec), which is present on an outer circumferential portion of the SiC epitaxial film, with respect to a level surface of the SiC epitaxial film (E) at a position on a wafer diameter intersecting a longitudinal center of the orientation flat or a groove bottom of the notch is 30% or less of a thickness (Et) of the SiC epitaxial film (E) at a wafer center (C), and the SiC epitaxial film (E) does not have triangular defects in a region less than 1 mm from an edge in a direction toward the wafer center.

公开(公告)号：US12166087B2

公开(公告)日：2024-12-10

申请号：US17454416

申请日：2021-11-10

Applicant: SHOWA DENKO K.K.

Inventor： Naoto Ishibashi ,  Keisuke Fukada

IPC: H01L29/36 ,  C30B25/14 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02 ,  H01L29/16

Abstract: A SiC epitaxial wafer of the present invention includes a SiC single crystal substrate, and a high concentration layer that is provided on the SiC single crystal substrate and has an average value of an n-type doping concentration of 1×1018/cm3 or more and 1×1019/cm3 or less, and in-plane uniformity of the doping concentration of 30% or less.

公开(公告)号：US20240371636A1

公开(公告)日：2024-11-07

申请号：US18777256

申请日：2024-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Li-Li Su ,  Yee-Chia Yeo

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/08 ,  C23C16/50 ,  C23C16/56 ,  C30B25/10 ,  C30B25/14 ,  C30B25/18 ,  C30B29/52 ,  H01J37/05 ,  H01J37/32 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

公开(公告)号：US20240360588A1

公开(公告)日：2024-10-31

申请号：US18419835

申请日：2024-01-23

Applicant: Applied Materials, Inc.

Inventor： Amir H. TAVAKOLI ,  Ala MORADIAN ,  Shawn Thanhson LE

IPC: C30B25/10 ,  C30B25/14

CPC classification number: C30B25/10 ,  C30B25/14

Abstract: An epitaxial growth processing chamber with a component having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is described. A component configured for use in an epitaxial growth processing chamber having a macrocell support structure configured with interconnecting physical supports that define fluidly-connected pores is also described. The component is a baseplate, an exhaust cap, an injection ring, an injection cap, a lower reflector, an upper reflector, a lower heat shield, an upper heat shield, a cone reflector, or combinations thereof. In some instances, the component may further include an inlet flow port. In some other instances, the component may further include an inlet flow port, outlet flow port and a fluid flow wall, and optionally a fluid flow baffle, and optionally a reflective surface.

公开(公告)号：US20240309548A1

公开(公告)日：2024-09-19

申请号：US18122537

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Awse MA'AYA ,  Ala MORADIAN

IPC: C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  F03G7/00

CPC classification number: C30B25/08 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  F03G7/0252

Abstract: A processing system including a chamber that includes one or more sidewalls defining an internal volume, one or more heat sources configured to generate heat, a liner disposed in the internal volume and lining one or more sidewalls, and one or more cooling channels. The processing system includes a fluid system in fluid communication with the cooling channels, the fluid system including one or more supply lines configured to supply a fluid to the cooling channels at a first temperature, and one or more return lines configured to flow the fluid from the cooling channels at a second temperature that is higher than the first temperature, and a fluid motor configured to move the fluid. The processing system includes an energy harnessing device configured to harness energy to produce electrical energy, the energy harnessing device including one or more turbines.

公开(公告)号：US12077881B2

公开(公告)日：2024-09-03

申请号：US17296217

申请日：2019-11-19

Applicant: EBNER Industrieofenbau GmbH

Inventor： Robert Ebner ,  Ghassan Barbar ,  Chih-Yung Hsiung ,  Bernd Gruhn

IPC: C30B35/00 ,  C30B7/14 ,  C30B25/14

CPC classification number: C30B35/002 ,  C30B7/14 ,  C30B25/14

Abstract: The present invention relates to an apparatus for growing crystals. The apparatus comprises a chamber and a crucible being arranged in a heatable accommodation space of the chamber, wherein the crucible comprises an inner volume which is configured for growing crystals inside. The crucible comprises a bottom from which respective side walls extend to a top section of the crucible. The crucible comprises at least one a deposition section which is configured for attaching a seed crystal, wherein the deposition section is formed on at least one of the side wall and the top section of the crucible.

公开(公告)号：US12060652B2

公开(公告)日：2024-08-13

申请号：US17310565

申请日：2019-11-27

Applicant: SINO NITRIDE SEMICONDUCTOR CO., LTD.

Inventor： Ye Huang ,  Peng Liu ,  Jianhui Wang ,  Jingquan Lu

IPC: C30B29/40 ,  C30B25/14

CPC classification number: C30B29/40 ,  C30B25/14

Abstract: A linear showerhead for growing GaN, including a first gas base, a second gas base, and a third gas base. First central gas passages are disposed in the middle of the first gas base. A first gap is disposed between two adjacent first central gas passages. A first nozzle is disposed at the bottom of a first central gas passage. The second gas base is disposed on the first gas base. Second central gas passages are disposed in the middle of the second gas base. A second gap is disposed between two adjacent second central gas passages. Two sides of a second central gas passage are provided with a second nozzle. The third gas base includes third central gas passages. A third central gas passage penetrates a first gap and a second gap. A third nozzle is disposed at the bottom of a third central gas passage.

公开(公告)号：US12060651B2

公开(公告)日：2024-08-13

申请号：US17317363

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Kartik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

Abstract: The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20240218562A1

公开(公告)日：2024-07-04

申请号：US18398449

申请日：2023-12-28

Applicant: GlobalWafers Co., Ltd.

Inventor： Manabu Hamano

IPC: C30B25/16 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02

CPC classification number: C30B25/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/186 ,  H01L21/02532 ,  H01L21/0262 ,  C30B29/06

Abstract: A method of processing semiconductor wafers includes placing a semiconductor wafer in a recess of a susceptor within a heated chamber. The recess is defined in the susceptor by a downwardly depending sidewall. The method also includes determining a distance of a peripheral edge of the wafer from the sidewall. The method also includes supplying a first process gas into the heated chamber at a first gas flow rate and a second process gas into the heated chamber at a second gas flow rate, and supplying heat to the heated chamber. The method also includes modulating the first gas flow rate, the second gas flow rate, and/or the heat supplied to the heated chamber to control a deposition rate of the first and second process gases near the peripheral edge of the wafer based on the determined distance of the peripheral edge of the wafer from the sidewall.

公开(公告)号：US20240218559A1

公开(公告)日：2024-07-04

申请号：US17924306

申请日：2022-07-20

Applicant: Suzhou Everbright Photonics Co., Ltd. ,  Everbright Institute of Semiconductor Photonics Co., Ltd.

Inventor： Jun WANG ,  Yang Cheng ,  Xiao Xiao ,  Yintao Guo ,  Yudan Cuo

IPC: C30B25/14 ,  C30B25/10 ,  C30B29/40

CPC classification number: C30B25/14 ,  C30B25/10 ,  C30B29/40

Abstract: The present application provides a semiconductor growth device and an operation method thereof. The semiconductor growth device includes: a reaction chamber; a heating base arranged in the reaction chamber, where the heating base includes a first heating area and a second heating area arranged around a periphery of the first heating area, a heating temperature of the first heating area is greater than a heating temperature of the second heating area, and a surface of the second heating area is adapted for placing a substrate; and a first spray unit and a second spray unit arranged at a top of the reaction chamber, where the first spray unit is arranged above the first heating area, and the second spray unit is arranged above the second heating area, where the first spray unit includes at least a first pipe, the first pipe is adapted for introducing a first gas source, the second spray unit includes at least a second pipe, the second pipe is adapted for introducing a second gas source, and a decomposition temperature of the first gas source is greater than a decomposition temperature of the second gas source. The optimal growth temperature range of the semiconductor growth device is reduced, and the use range of the device is expanded.