- 专利标题： Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming
-
申请号： US247053申请日： 1988-09-20
-
公开(公告)号： US4994407A公开(公告)日： 1991-02-19
- 发明人: Frank Z. Custode , John G. Poksheva
- 申请人： Frank Z. Custode , John G. Poksheva
- 申请人地址： CA El Segundo
- 专利权人： Rockwell International Corporation
- 当前专利权人： Rockwell International Corporation
- 当前专利权人地址： CA El Segundo
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/092
摘要：
The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.
公开/授权文献
- US5614214A Reduction of liposome-induced adverse physiological reactions 公开/授权日：1997-03-25
信息查询
IPC分类:
