发明授权
- 专利标题： Semiconductor device constituting bipolar transistor
- 专利标题（中）： 构成双极晶体管的半导体器件
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申请号： US412552申请日： 1989-09-25
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公开(公告)号： US4994880A公开(公告)日： 1991-02-19
- 发明人: Naohito Kato , Yoshiyuki Miyase , Tomoatsu Makino , Kasuhiro Yamada , Masami Yamaoka , Takeshi Matsui , Masahiro Yamamoto , Yoshiki Ishida , Tohru Nomura
- 申请人： Naohito Kato , Yoshiyuki Miyase , Tomoatsu Makino , Kasuhiro Yamada , Masami Yamaoka , Takeshi Matsui , Masahiro Yamamoto , Yoshiki Ishida , Tohru Nomura
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX61-260994 19861031; JPX61-289424 19861204
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L29/06 ; H01L29/417
摘要：
Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.
公开/授权文献
- US6127406A Discodermolide compounds and methods of use 公开/授权日：2000-10-03