A linear-gain amplifier arrangement comprises a current amplifying cell consisting of field-effect transistors and comprising a first (M1, M3) and a second (M2, M4current-mirror circuit whose respective input transistors (M1; M2) and output transistors (M3; M4) constitute a first and a second differential pair. The input transistors (M1; M2) have their drain electrodes connected to voltage-current converter (V/I) made up of field-effect transistors. The V/I converter supplies difference currents (I.sub.in1 ; I.sub.in2) which are square-law functions of the input voltage (U.sub.in) to be amplified. The difference between these input currents is a linear function of the input voltage. When the transistors are operated in their saturation regions the difference between the output currents (I.sub.out1 ; I.sub.out2) is also a linear function of the input voltage (U.sub.in). By adding a direct voltage (V.sub.c) to the gate-source voltage of the input and output transistors or by adding a direct current (I.sub.c) to the respective input currents (I.sub.in1 ; I.sub.in2) the gain can be varied without a change in bandwidth. When the arrangement is constructed as an integrated semiconductor circuit its gain can be made immune to temperature variations and tolerances in the fabrication process.