发明授权
US5008542A Method and system for automated measurement of whole-wafer etch pit
density in GaAs
失效
在GaAs中自动测量全晶圆蚀刻坑密度的方法和系统
- 专利标题： Method and system for automated measurement of whole-wafer etch pit density in GaAs
- 专利标题（中）： 在GaAs中自动测量全晶圆蚀刻坑密度的方法和系统
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申请号： US456924申请日： 1989-12-20
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公开(公告)号： US5008542A公开(公告)日： 1991-04-16
- 发明人: David C. Look , James S. Sewell , Millard G. Mier , John R. Sizelove , Dennis C. Walters , Scott C. Dudley
- 申请人： David C. Look , James S. Sewell , Millard G. Mier , John R. Sizelove , Dennis C. Walters , Scott C. Dudley
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人： The United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址： DC Washington
- 主分类号： G01N21/95
- IPC分类号： G01N21/95
摘要：
A method and system for measuring whole-wafer etch pit density (.rho..sub.D) is disclosed in which an etch GaAs wafer is tested for fractional transmission at a plurality of points over its surface. The fractional transmission (T) of light through the wafer is detected, amplified and fed to a computer where at least two points of transmission measurement are selected for calibration. From these measurements, together with an estimate of the average etch pit size (area), the values for fractional transmission in regions of low etch pit density T.sub.O and high etch pit density T.sub.E may be calculated, and used to convert transmission data directly to etch pit density (.rho..sub.D) according to the equation ##EQU1##
公开/授权文献
- US5581934A Rodent screen 公开/授权日：1996-12-10
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