发明授权
US5011753A Photoresist compositions containing polyamides polybenzoxa from bis((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ethers 失效
含有二((氨基羟基苯基)六氟异丙基)二苯基醚的聚酰胺聚苯并恶唑的光致抗蚀剂组合物

Photoresist compositions containing polyamides polybenzoxa from
bis((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ethers
摘要:
Heat resistant, shapable, hydroxy and/or alkoxy-substituted polyamides derived from at least one diamine selected from unsubstituted and substituted 4,4'-bis[2-(4-amino-3-hydroxyphenyl)hexafluoroisopropyl)]diphenyl ether 4,4'-bis-[2-(3-amino-4-hydroxyphenyl)hexafluoroisopropyl]diphenyl ether and a dicarboxylic acid or a derivative thereof e.g. its acid halo or ester. The polyamides of the invention may be thermally cured to form polybenzoxazoles of higher heat resistance which are stable to hydrolytic, chemical and radiation attack.The polyamides of the invention may be formed into shaped articles by molding, extrusion and solvent casting processes preferably in the presence of a solvent or diluent and then optionally converted into heat resistant, insoluble polybenzoxazoles. These shaped articles are useful in aircraft, electronic and other commercial applications where heat, chemical and radiation resistance are desired in conjunction with good mechanical and electrical properties.
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