发明授权
US5013673A Implantation method for uniform trench sidewall doping by scanning
velocity correction
失效
通过扫描速度校正的均匀沟槽侧壁掺杂的植入方法
- 专利标题: Implantation method for uniform trench sidewall doping by scanning velocity correction
- 专利标题(中): 通过扫描速度校正的均匀沟槽侧壁掺杂的植入方法
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申请号: US543311申请日: 1990-06-26
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公开(公告)号: US5013673A公开(公告)日: 1991-05-07
- 发明人: Genshu Fuse
- 申请人: Genshu Fuse
- 申请人地址: JPX
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX1-170114 19890630
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01L21/265 ; H01L21/762
摘要:
An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein;the amount of ion implantation to said sidewall is made uniform by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam.Also disclosed is a method of manufacturing a semiconductor device making use of such an ion implantation method.
公开/授权文献
- US5859647A Data processing apparatus and method and output device 公开/授权日:1999-01-12