公开(公告)号：US5049518A

公开(公告)日：1991-09-17

申请号：US450515

申请日：1989-12-14

申请人： Genshu Fuse

发明人： Genshu Fuse

IPC分类号： H01L21/74 ,  H01L21/8242 ,  H01L23/48

CPC分类号： H01L27/10861 ,  H01L21/743 ,  H01L23/481 ,  H01L2924/0002

摘要： A semiconductor memory, particularly, a dynamic RAM, is provided having a two-cell one-contact memory cell connection structure. A connection portion between memory cells in a silicon substrate of a dynamic RAM, wherein each memory cell has one silicon island enclosed by a trench and provided with two transistor cells within said island, is formed by connecting a polysilicon electrode, enclosing the periphery of the silicon island at the inside of the trench and separated at two portions of the periphery of the silicon island, to the source or drain of one of the two transistor cells of the memory cell. The connection of the polysilicon electrode to the source or drain of the transistor cell of each of two adjacent memory cells can be easily achieved through self aligning by using a fine-trench polysilicon burying method or a selective epitaxial method.

摘要翻译： 提供具有双单元单触点存储单元连接结构的半导体存储器，特别是动态RAM。 在动态RAM的硅衬底中的存储器单元之间的连接部分，其中每个存储单元具有由沟槽包围并且在所述岛内设置有两个晶体管单元的一个硅岛，通过连接多晶硅电极形成，该多晶硅电极包围 硅岛，并且在硅岛的周边的两部分分离到存储单元的两个晶体管单元之一的源极或漏极。 通过使用细沟槽多晶硅埋入法或选择性外延法可以容易地实现多晶硅电极与两个相邻存储单元中的每一个的晶体管单元的源极或漏极的连接。

公开(公告)号：US4918027A

公开(公告)日：1990-04-17

申请号：US191788

申请日：1988-04-27

申请人： Genshu Fuse ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Ohzone

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/265 ,  H01L21/26586 ,  H01L21/76237

摘要： A method of fabricating a semiconductor device comprising a step of forming a trench on a semiconductor substrate, a step of positioning the semiconductor substrate in a first position such that the direction of the ion beams is inclined to a plane which is perpendicular to the principal surface of the semiconductor substrate and which is parallel to a first side-wall of the trench, a step of implanting ions into the first side-wall by emitting ion beams onto the first side-wall of the trench of the semiconductor substrate at the first position, a step of rotating the semiconductor substrate about an axis perpendicular to the principal surface thereof to a second position which is different from the first position, a step of implanting ions into a second side-wall by emitting ion beams onto the second side-wall of the trench of the semiconductor substrate at the second position, a step of rotating the semiconductor substrate about the axis to a third position which is different from the first and second positions, a step of implanting ions into a third side-wall by emitting ion beams onto the third side-wall of the trench of the semiconductor substrate at the third position, a step of rotating the semiconductor substrate about the axis to a fourth position which is different from the first, second and third positions, and a step of implanting ions into a fourth side-wall by emitting ion beams onto the fourth side-wall of the trench of the semiconductor substrate at the fourth position.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成沟槽的步骤，将半导体衬底定位在第一位置的步骤，使得离子束的方向倾斜于垂直于主表面的平面 并且其平行于沟槽的第一侧壁，通过在第一位置处将离子注入到半导体衬底的沟槽的第一侧壁上而将离子注入到第一侧壁中的步骤 将半导体衬底绕其主表面垂直的轴线旋转到与第一位置不同的第二位置的步骤，通过将离子束发射到第二侧壁上而将离子注入第二侧壁的步骤 在所述第二位置处所述半导体衬底的沟槽的步骤，将所述半导体衬底绕所述轴线旋转到与所述第二位置不同的第三位置 e第一和第二位置，通过在第三位置处将离子束发射到半导体衬底的沟槽的第三侧壁上而将离子注入到第三侧壁中的步骤，将半导体衬底绕轴线旋转的步骤 与第一，第二和第三位置不同的第四位置，以及通过在第四位置将离子束发射到半导体衬底的沟槽的第四侧壁上而将离子注入第四侧壁的步骤。

公开(公告)号：US09023720B2

公开(公告)日：2015-05-05

申请号：US13217679

申请日：2011-08-25

申请人： Genshu Fuse ,  Michiro Sugitani

发明人： Genshu Fuse ,  Michiro Sugitani

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/425 ,  H01L21/265 ,  H01L29/66 ,  H01L21/223

CPC分类号： H01L21/26526 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

摘要： After formation of a silicon Fin part on a silicon substrate, a thin film including an impurity atom which becomes a donor or an acceptor is formed so that a thickness of the thin film formed on the surface of an upper flat portion of the silicon Fin part becomes large relative to a thickness of the thin film formed to the surface of side wall portions of the silicon Fin part. A first diagonal ion implantation from a diagonal upper direction to the thin film is performed and subsequently a second diagonal ion implantation is performed from an opposite diagonal upper direction to the thin film. Recoiling of the impurity atom from the inside of the thin film to the inside of the side wall portions and to the inside of the upper flat portion is realized by performing the first and second diagonal ion implantations.

摘要翻译： 在硅衬底上形成硅翅片部件之后，形成包括成为供体或受体的杂质原子的薄膜，使得形成在硅鳍部件的上部平坦部分的表面上的薄膜的厚度 相对于形成在硅鳍部的侧壁部的表面的薄膜的厚度变大。 执行从对角线上方向薄膜的第一对角离子注入，随后从与薄膜相反的对角上方执行第二对角线离子注入。 通过进行第一和第二对角线离子注入，实现了从薄膜内部到侧壁部分内部和上部平坦部分内部的杂质原子的再循环。

公开(公告)号：USRE37228E1

公开(公告)日：2001-06-12

申请号：US08136241

申请日：1993-10-15

申请人： Genshu Fuse ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Ohzone

IPC分类号： H01L21425

CPC分类号： H01L21/265 ,  H01L21/26586 ,  H01L21/76237

摘要： A method of fabricating a semiconductor device comprising a step of forming a trench selectively on a semiconductor substrate, a step of positioning said semiconductor substrate to a first position inclined to a plane vertical to ion beams, a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the first position, a step of positioning said semiconductor substrate to a second position which is different from the first position by rotating it, and a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the second position.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上选择性地形成沟槽的步骤，将所述半导体衬底定位到垂直于垂直于离子束倾斜的第一位置的步骤，通过发射离子束注入离子的步骤 在第一位置处的半导体衬底的沟槽的侧壁，通过旋转将半导体衬底定位到与第一位置不同的第二位置的步骤，以及通过将离子束注入到离子束的步骤 在第二位置处半导体衬底的沟槽的侧壁。

公开(公告)号：US5476006A

公开(公告)日：1995-12-19

申请号：US88243

申请日：1993-07-07

申请人： Shingi Fujii ,  Genshu Fuse ,  Morio Inoue

发明人： Shingi Fujii ,  Genshu Fuse ,  Morio Inoue

IPC分类号： G01B5/28 ,  G01B21/30 ,  G01N27/00 ,  G01Q60/00 ,  H01J37/28

CPC分类号： G01Q30/14 ,  B82Y35/00

摘要： Crystal evaluation apparatus is disclosed which includes a cell region having an anode and a cathode, a reservoir tank for supplying of an aqueous solution for forming an anodic oxide film in the cell region, a reservoir tank for supplying of an aqueous solution for removing the anodic oxide film and a scanning microprobe microscope having a scanning microprobe, installed inside the cell region. A crystal evaluation method is also disclosed which contains anodic oxidation on a semiconductor substrate, removal of an anodic oxide film developed. The semiconductor substrate is observed with a scanning probe microscope having a scanning microprobe. The oxide film is formed on the semiconductor substrate by the anodic oxidation method and then removed by a mixture of hydrofluoric acid and ammonium fluoride. The anodic oxidation method exerts no or little physical impact on the substrate. The hydrofluoric acid and ammonium fluoride mixture removes selectively only the oxide film so that secondary ion implantation defects are exposed to a surface of the substrate. The shape or configuration of the secondary ion implantation defects is observed with an atomic force microscope having a high resolution on the order of nano meter. Therefore, the shape of the defects on the order of nano meter may be observed. In addition, the distribution of impurity concentration over the surface of the substrate may be measured very accurately.

摘要翻译： 公开了一种水晶评价装置，其包括具有阳极和阴极的单元区域，用于在单元区域中供给用于形成阳极氧化膜的水溶液的储存槽，用于供给用于除去阳极的水溶液的储存槽 氧化物膜和具有扫描微探针的扫描微探针显微镜，安装在细胞区域内。 还公开了一种在半导体衬底上包含阳极氧化的晶体评价方法，除去显影的阳极氧化膜。 用具有扫描微探针的扫描探针显微镜观察半导体衬底。 通过阳极氧化法在半导体衬底上形成氧化膜，然后通过氢氟酸和氟化铵的混合物除去。 阳极氧化方法对基材没有或几乎没有物理冲击。 氢氟酸和氟化铵混合物仅选择性地除去氧化膜，使得二次离子注入缺陷暴露于衬底的表面。 用具有大约数量级的高分辨率的原子力显微镜观察二次离子注入缺陷的形状或构型。 因此，可以观察到纳米级的缺陷的形状。 此外，可以非常精确地测量衬底表面上的杂质浓度分布。

公开(公告)号：US5223445A

公开(公告)日：1993-06-29

申请号：US707801

申请日：1991-05-30

申请人： Genshu Fuse

发明人： Genshu Fuse

IPC分类号： H01L21/265 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/6659

摘要： An ion implanting method which suppresses defects by changing the shape of the amorphous layer formed by ion injection from that of a conventional device.After forming a mask pattern on a semiconductor wafer, amorphous layers are then formed with sufficient penetration under the mask material by implanting ions at an implant angle greater than or equal to 20 degrees with a dose amount enough for forming amorphous layers. In this large angle ion implanting method, the edge of each amorphous layer becomes dull and, thereby, no voids are formed in a successive heat treatment.

摘要翻译： 一种离子注入方法，其通过改变由离子注入形成的非晶层的形状与常规器件的形状来抑制缺陷。 在半导体晶片上形成掩模图案之后，通过以足以形成非晶层的剂量量以大于或等于20度的注入角度注入离子，在掩模材料下形成具有足够穿透的非晶层。 在这种大角度离子注入方法中，每个非晶层的边缘变得钝化，从而在连续热处理中不形成空隙。

公开(公告)号：US5013673A

公开(公告)日：1991-05-07

申请号：US543311

申请日：1990-06-26

申请人： Genshu Fuse

发明人： Genshu Fuse

IPC分类号： H01J37/317 ,  H01L21/265 ,  H01L21/762

CPC分类号： H01L21/76237 ,  H01L21/26586

摘要： An ion implantation method comprising doping a trench sidewall formed in the surface of a semiconductor substrate, with impurities by intermittently rotating step ion implantation carried out in the state that said sidewall is angled with respect to an ion beam, wherein;the amount of ion implantation to said sidewall is made uniform by varying the scanning velocity of the ion beam on the surface of said semiconductor substrate, at the position near to, and the position distant from, the upstream side of the beam applied to a position at which said surface of semiconductor substrate is inclined with respect to the beam.Also disclosed is a method of manufacturing a semiconductor device making use of such an ion implantation method.

摘要翻译： 一种离子注入方法，包括：在所述侧壁相对于离子束成角度的状态下，通过间歇地旋转步骤离子注入来掺杂形成在半导体衬底的表面中的沟槽侧壁，其中杂质通过间歇旋转来进行; 通过改变在所述半导体衬底的表面上的离子束的扫描速度和远离施加到位置的光束的上游侧的位置，离子注入到所述侧壁的量是均匀的 所述半导体衬底的所述表面相对于所述光束倾斜。 还公开了使用这种离子注入方法制造半导体器件的方法。

公开(公告)号：US4920390A

公开(公告)日：1990-04-24

申请号：US218456

申请日：1988-07-07

申请人： Genshu Fuse ,  Toshio Yamada ,  Shinji Odanaka ,  Masaki Fukumoto

发明人： Genshu Fuse ,  Toshio Yamada ,  Shinji Odanaka ,  Masaki Fukumoto

IPC分类号： H01L27/00 ,  H01L27/108 ,  H01L29/94

CPC分类号： H01L29/945 ,  H01L27/10832

摘要： A semiconductor memory device (DRAM) includes a plurality of island regions, at least one cell transistor disposed on each island region and a cylindrical capacitor surrounding each island region. With such a structure, the capacity of the cell capacitor incorporated into a small space can be increased. Furthermore, a method of fabricating a semiconductor memory device includes a step of forming a groove having a necessary depth in a semiconductor substrate, a step of depositing a membrane having excellent covering characteristics in the groove, a step of etching by using an etching method having a strong anisotropy in the vertical direction while leaving the deposited membrane on a sidewall, and a step of etching the exposed portion of the semiconductor surface deeper in the groove and forming a capacity element and isolation region by using this deep trench.

摘要翻译： 半导体存储器件（DRAM）包括多个岛状区域，设置在每个岛状区域上的至少一个单元晶体管和围绕每个岛状区域的圆柱形电容器。 通过这样的结构，可以提高并入小空间的电池电容器的容量。 此外，制造半导体存储器件的方法包括在半导体衬底中形成具有必要深度的凹槽的步骤，在沟槽中沉积具有优异覆盖特性的膜的步骤，通过使用具有 在垂直方向上具有强烈的各向异性，同时将沉积的膜留在侧壁上，以及通过使用该深沟槽来蚀刻半导体表面的暴露部分更深的沟槽并形成电容元件和隔离区域的步骤。

公开(公告)号：US5270227A

公开(公告)日：1993-12-14

申请号：US858107

申请日：1992-03-26

申请人： Shuichi Kameyama ,  Genshu Fuse

发明人： Shuichi Kameyama ,  Genshu Fuse

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/088 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L21/266

CPC分类号： H01L29/66272 ,  H01L21/26586 ,  H01L21/8249 ,  H01L29/6659 ,  H01L29/78 ,  Y10S148/01

摘要： An improved method for fabrication of a super-high density semiconductor device wherein ion implantation is used to eliminate defects or inhibit the occurrence of growth of defects in the semiconductor device. Ions of high concentration are implanted into a monocrystal semiconductor region in which principal elements such as bipolar element and MOS element are formed, by using a mask pattern covering the semiconductor region and at a largely inclined implantation angle equal to or of more than 20 degrees. This provides for formation of amorphous regions 170A, 170B extending sufficiently into areas beneath the ends of the mask. The amorphous regions are recrystallized by heat treatment, thereby inhibiting the growth of a corner defect known as "voids 21" which has often occurred at edges of amorphous regions 170A, 170B in the conventional method. Thus, a device which is less liable to electrical leaks is provided.

公开(公告)号：US5270226A

公开(公告)日：1993-12-14

申请号：US332714

申请日：1989-04-03

申请人： Takashi Hori ,  Toshiki Yabu ,  Kazumi Kurimoto ,  Genshu Fuse

发明人： Takashi Hori ,  Toshiki Yabu ,  Kazumi Kurimoto ,  Genshu Fuse

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/66575 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/7836

摘要： By symmetrically forming source and drain regions to the gate electrodes, electrically symmetrical transistor characteristics are obtained. After forming the first source and drain regions by large-tilt-angle ion implantation, without a sidewall in the gate electrode or after forming a sidewall shorter than the distance in the lateral direction of the second source and drain regions from the end of the mask for ion implantation, the diffusion of the second source and drain regions in the lateral direction is restricted to the maximum extent by heat treatment for a short time, and then the end of the gate electrode and the end of the second source and drain regions are matched, or their overlap region is formed. As a result, the manufacturing method of the MOS transistor results in both high performance and high reliability.

摘要翻译： 通过对栅极对称地形成源极和漏极区域，获得电对称的晶体管特性。 在通过大倾斜角度离子注入形成第一源极和漏极区域之后，在栅电极中没有侧壁或在形成比第二源极和漏极区域的横向方向上距离掩模的端部短的侧壁 对于离子注入，第二源极和漏极区域在横向上的扩散通过短时间的热处理被限制在最大程度，然后栅电极的端部和第二源极和漏极区域的端部是 匹配，或者形成它们的重叠区域。 结果，MOS晶体管的制造方法具有高性能和高可靠性。