发明授权
- 专利标题： Method for the manufacture of optical semiconductor device
- 专利标题（中）： 光半导体器件的制造方法
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申请号： US316865申请日： 1989-02-28
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公开(公告)号： US5019519A公开(公告)日： 1991-05-28
- 发明人: Hideaki Tanaka , Shigeyuki Akiba , Masatoshi Suzuki , Katsuyuki Utaka
- 申请人： Hideaki Tanaka , Shigeyuki Akiba , Masatoshi Suzuki , Katsuyuki Utaka
- 申请人地址： JPX Tokyo
- 专利权人： Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人： Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-56248 19880311
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; G02B6/134 ; H01L21/306 ; H01L21/324 ; H01S5/00 ; H01S5/026 ; H01S5/042 ; H01S5/20
摘要：
An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
公开/授权文献
- US5994418A Hollow polyimide microspheres 公开/授权日：1999-11-30