公开(公告)号：US20240317633A1

公开(公告)日：2024-09-26

申请号：US18733138

申请日：2024-06-04

Applicant: CORNING INCORPORATED

Inventor： Lars Martin Otfried Brusberg ,  Davide Domenico Fortusini

IPC: C03C4/00 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C4/18 ,  C03C21/00 ,  G02B6/134

CPC classification number: C03C4/0092 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C4/18 ,  C03C21/002 ,  C03C21/005 ,  G02B6/1345 ,  C03C2204/00

Abstract: The low-loss ion exchanged (IOX) waveguide disclosed herein includes a glass substrate having a top surface and comprising an alkali-aluminosilicate glass with between 3 and 15 mol % of Na2O and a concentration of Fe of 20 parts per million (ppm) or less. The glass substrate includes a buried Ag—Na IOX region, wherein this region and a surrounding portion of glass substrate define the IOX waveguide. The IOX waveguide has an optical loss OL≤0.05 dB/cm and a birefringence magnitude |B|≤0.001. The glass substrate with multiple IOX waveguides can be used as an optical backplane for systems having optical functionality and can find use in data center and high-performance data transmission applications.

公开(公告)号：US11852953B2

公开(公告)日：2023-12-26

申请号：US17779958

申请日：2019-12-03

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Takeshi Umeki ,  Takushi Kazama ,  Takahiro Kashiwazaki ,  Koji Embutsu ,  Osamu Tadanaga ,  Asuka Inoue ,  Ryoichi Kasahara

IPC: G02F1/377 ,  G02F1/355 ,  G02B6/122 ,  G02B6/134 ,  G02B6/12

CPC classification number: G02F1/3775 ,  G02B6/1223 ,  G02B6/1342 ,  G02F1/3551 ,  G02B2006/1204 ,  G02B2006/12097

Abstract: A highly-efficient ridge waveguide includes a base substrate of a single-crystal and a core substrate made of a nonlinear optical medium, the base substrate and the core substrate being directly bonded, and includes a thin film layer formed on a surface of the core substrate on the upper side of a periodically polarization-reversed structure, and becomes a wavelength conversion element. A direct bonding method through thermal diffusion is applied to bonding. The core substrate has a ridge structure formed in a light propagating direction and a reversed structure formed by processing this. A surface of the core substrate is ground and a thin film layer is formed on the ground surface. A core formed by digging a core layer of the core substrate in an unbonded state is provided on an upper surface of an undercladding layer of the base substrate in a bonded state. Two side surfaces of the core are in contact with an air layer.

公开(公告)号：US11460724B2

公开(公告)日：2022-10-04

申请号：US16944809

申请日：2020-07-31

Applicant: Ciena Corporation

Inventor： Christine Latrasse ,  Alexandre Delisle-Simard ,  Michel Poulin ,  Ian Betty ,  Arash Khajooeizadeh ,  Michael Vitic

IPC: G02F1/025 ,  G02F1/225 ,  G02B6/12 ,  G02B6/134 ,  G02F1/015 ,  G02F1/21

Abstract: An optical modulator includes multiple segments including modulator segments and a Radio Frequency (RF) crossing segment where RF lines extending a length of the modulator cross one another. The present disclosure includes optimization of one or more of a geometry of the RF crossing and a location of the RF crossing segment along the length. The geometry is selected so that the RF crossing segment appears as another segment having similar characteristics as modulator segments. The location of the RF crossing segment is selected to balance out fabrication error and phase efficiency.

公开(公告)号：US11175451B2

公开(公告)日：2021-11-16

申请号：US16733167

申请日：2020-01-02

Applicant: Intel Corporation

Inventor： Hasitha Jayatilleka ,  Harel Frish ,  Ranjeet Kumar ,  Haisheng Rong ,  John Heck

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/134

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

公开(公告)号：US20210311335A1

公开(公告)日：2021-10-07

申请号：US17352223

申请日：2021-06-18

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： James Dongyoon Oh ,  David Arlo Nelson ,  Pradeep Srinivasan ,  Amit Singh Nagra ,  Aaron John Zilkie ,  Jeffrey Driscoll ,  Aaron L. Birkbeck

IPC: G02F1/025 ,  G02B6/134 ,  G02F1/225

Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.

公开(公告)号：US11086074B1

公开(公告)日：2021-08-10

申请号：US16924025

申请日：2020-07-08

Applicant: DICON FIBEROPTICS, INC.

Inventor： Seng Fatt Liew ,  Yizhuo He ,  Ho-Shang Lee

IPC: G02B6/134 ,  G02B6/136 ,  C23C14/48 ,  C23C14/58 ,  G02B6/12

Abstract: Methods and techniques are presented to inhibit crystallization in optical waveguide structures, during high temperature annealing or deposition, thus preventing the formation of crystalline grains that scatter and/or absorb light. Dopant atoms or molecules are used to disrupt crystallization. The dopant atoms or molecules are selected to be transparent to the optical signal's wavelength range(s). Optical signals propagating in a waveguide that is fabricated with such techniques will experience reduced propagation loss or insertion loss. The passive dopants can also be used in active devices such as lasers or optical amplifiers that incorporate optically active dopants, as long as the passive dopants are chosen so that they do not interact with the active dopants.

公开(公告)号：US11037839B2

公开(公告)日：2021-06-15

申请号：US16317171

申请日：2017-07-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron Zilkie ,  Andrew Rickman ,  Damiana Lerose

IPC: H01L21/8238 ,  H01L21/8258 ,  G02B6/13 ,  G02B6/136 ,  G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B6/122 ,  H01L21/762 ,  G02B6/132 ,  G02B6/134 ,  H01S5/02

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

公开(公告)号：US11009662B2

公开(公告)日：2021-05-18

申请号：US15695466

申请日：2017-09-05

Applicant: Facebook Technologies, LLC

Inventor： Andrew John Ouderkirk

IPC: G02B6/13 ,  G02B6/134 ,  G02B6/138 ,  B29D11/00 ,  F21V8/00 ,  G02B6/12 ,  G02B6/122

Abstract: A manufacturing system for fabricating optical waveguides includes a diffusion channel with a plurality of inlets at a first end and an outlet at a second end opposite to the first end and separated from the inlets by a channel length. Each of the plurality of inlets includes a central inlet flowing a first resin into the diffusion channel such that the first resin flows along the channel length of the diffusion channel toward the outlet, and an outer inlet flowing a second resin along a periphery of the first resin. The second resin may have an index of refraction different than the first resin. The diffusion may occur between portions of the first resin and portions of the second resin over the channel length to form a composite resin having a profile with a plurality of indices of refraction in at least one dimension.

公开(公告)号：US20210048581A1

公开(公告)日：2021-02-18

申请号：US16991495

申请日：2020-08-12

Applicant: McMaster University

Inventor： Andrew Knights ,  David Hagan ,  Benjamin Torres-Kulik

IPC: G02B6/134 ,  G02B6/12 ,  H05B3/12 ,  H05B1/02

Abstract: Methods for post-fabrication trimming of a silicon ring resonator are disclosed. Methods include fabricating a heating element, positioned within 2 microns of the silicon ring resonator, subjecting the silicon ring resonator to energetic ion implantation, and annealing the silicon ring resonator, using the heating element. The energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum. The annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.

公开(公告)号：US10884185B2

公开(公告)日：2021-01-05

申请号：US16380111

申请日：2019-04-10

Applicant: ATOMERA INCORPORATED

Inventor： Robert John Stephenson

IPC: H01L33/06 ,  H01L23/522 ,  H01L27/15 ,  G02B6/12 ,  H01L27/12 ,  H01L29/15 ,  G02B6/134 ,  H01L33/00 ,  H01L33/34 ,  H01L33/58

Abstract: A semiconductor device may include a substrate having waveguides thereon, and a superlattice overlying the substrate and waveguides. The superlattice may include stacked groups of layers, with each group of layers comprising a stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include an active device layer on the superlattice including at least one active semiconductor device.