发明授权
- 专利标题: Ampoule for crystal-growing furnace
- 专利标题(中): 用于晶体生长炉的安瓿
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申请号: US472232申请日: 1990-01-30
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公开(公告)号: US5023058A公开(公告)日: 1991-06-11
- 发明人: John F. Klein , Joel Kearns , Jerry Gonen
- 申请人: John F. Klein , Joel Kearns , Jerry Gonen
- 申请人地址: NY Bethpage
- 专利权人: Grumman Aerospace Corporation
- 当前专利权人: Grumman Aerospace Corporation
- 当前专利权人地址: NY Bethpage
- 主分类号: C30B11/00
- IPC分类号: C30B11/00 ; C30B30/08
摘要:
An ampoule is designed for inclusion within a multi-zone furnace which forms particularly well in space. The ampoule includes an outer quartz wall which has outward projections supported by complementary members of a space furnace and minimizes the transferral of vibrational forces through the ampoule. An inner quartz containment member includes a hollow projection for holding a semiconductor seed, the containment member extending toward a charge containment section. A tube is positioned between an outward end of the charge and the interior wall of the ampoule for maintaining the charge in place during space travel. Further, the tube serves as a vapor chamber for accommodating overpressurization of a vapor component such as arsenide, in the case a gallium arsenide crystal is being grown. The ability to accommodate overpressurization of the vapor allows a uniform and homogeneous single crystal to be grown.
公开/授权文献
- US4532422A Electron holography microscope 公开/授权日:1985-07-30
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