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    Ampoule for crystal-growing furnace
    1.
    发明授权
    Ampoule for crystal-growing furnace 失效
    用于晶体生长炉的安瓿

    公开(公告)号：US5023058A

    公开(公告)日：1991-06-11

    申请号：US472232

    申请日：1990-01-30

    申请人： John F. Klein ,  Joel Kearns ,  Jerry Gonen

    发明人： John F. Klein ,  Joel Kearns ,  Jerry Gonen

    IPC分类号： C30B11/00 ,  C30B30/08

    CPC分类号： C30B30/08 ,  C30B11/00 ,  C30B11/002 ,  C30B29/42 ,  Y10S117/901 ,  Y10T117/1092

    摘要： An ampoule is designed for inclusion within a multi-zone furnace which forms particularly well in space. The ampoule includes an outer quartz wall which has outward projections supported by complementary members of a space furnace and minimizes the transferral of vibrational forces through the ampoule. An inner quartz containment member includes a hollow projection for holding a semiconductor seed, the containment member extending toward a charge containment section. A tube is positioned between an outward end of the charge and the interior wall of the ampoule for maintaining the charge in place during space travel. Further, the tube serves as a vapor chamber for accommodating overpressurization of a vapor component such as arsenide, in the case a gallium arsenide crystal is being grown. The ability to accommodate overpressurization of the vapor allows a uniform and homogeneous single crystal to be grown.

    摘要翻译： 安瓿被设计成包含在多区域炉中，其在空间中形成特别好。 安瓿包括外部石英壁，其具有由空间炉的互补构件支撑的向外突出部，并且使通过安瓿的振动力的传递最小化。 内部石英容纳构件包括用于保持半导体种子的中空突起，该容纳构件朝向电荷容纳部延伸。 管子位于电荷的外端和安瓿的内壁之间，用于在空间行进期间将电荷保持在适当位置。 此外，在生长砷化镓晶体的情况下，该管用作容纳蒸气成分例如砷化物的过压的蒸气室。 适应蒸汽过压的能力允许生长均匀且均匀的单晶。

    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
    3.
    发明授权
    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
    在生长过程中控制硅晶锭的直径的方法和装置

    公开(公告)号：US08012255B2

    公开(公告)日：2011-09-06

    申请号：US12184016

    申请日：2008-07-31

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B15/22

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

    摘要翻译： 根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。 该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。 用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。 本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。 本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS
    4.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权
    用于控制生长过程中硅晶体直径的方法和装置

    公开(公告)号：US20100024716A1

    公开(公告)日：2010-02-04

    申请号：US12184016

    申请日：2008-07-31

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B15/20

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

    摘要翻译： 根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。 该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。 用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。 本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。 本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

    Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor
    6.
    发明授权
    Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor 有权
    用于牵拉和生长单晶硅锭的晶体拉制装置及其方法

    公开(公告)号：US06648967B2

    公开(公告)日：2003-11-18

    申请号：US09989352

    申请日：2001-11-20

    申请人： Volker R. Todt ,  Rocky Oakley ,  Peter Wildes ,  Fritz Kirscht ,  Haresh Siriwardane ,  Joel Kearns

    发明人： Volker R. Todt ,  Rocky Oakley ,  Peter Wildes ,  Fritz Kirscht ,  Haresh Siriwardane ,  Joel Kearns

    IPC分类号： C30B3500

    CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled. According to this invention, it is possible to obtain an N-type monocrystalline silicon ingot heavily doped with impurities and having a low resistivity in which the oxygen concentration is desirably controlled, or it is possible to obtain a monocrystalline silicon ingot of which the seed end retains an oxygen concentration determined by natural equilibrium conditions, while the cylindrical portion and tail end contain a relatively constant oxygen concentration, being relieved of a sharp fall in oxygen supply which is observed in a conventional apparatus.

    摘要翻译： 用于牵拉和生长单晶硅锭的晶体拉制装置包括放置在腔室中的石英坩埚，并且包含将从其中拉出单晶硅锭的硅熔体，石墨坩埚容器，用于通过围绕外圆周来支撑石英坩埚 坩埚的表面和外部基面，以及设置在坩埚容器的外周表面周围的加热硅熔体的加热器。 该装置还包括具有顶表面的间隔件，该顶表面的面积小于石英坩埚的基部面积并且具有高于硅的熔点，被插入石英坩埚的基部和坩埚容器的基部之间，同时 单晶硅锭被拉。 根据本发明，可以获得重掺杂有杂质且具有低电阻率的N型单晶硅锭，其中希望控制氧浓度，或者可以获得晶种结晶的单晶硅锭 保持由自然平衡条件确定的氧气浓度，而圆柱形部分和尾端包含相对恒定的氧浓度，从而避免了在常规装置中观察到的供氧急剧下降。

    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
    8.
    发明授权
    Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process 有权
    在生长过程中控制硅晶锭的直径的方法和装置

    公开(公告)号：US08641822B2

    公开(公告)日：2014-02-04

    申请号：US12719405

    申请日：2010-03-08

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B35/00 ,  C30B15/20

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.

    摘要翻译： 根据CZ工艺从硅熔体生长单晶硅锭的方法和设备的改进。 该改进执行定义弯液面的目标锥度和测量的锥度之间的误差，并将锥度误差转换为硅锭的拉速的反馈调节。 用于控制CZ过程的常规控制模型依赖于线性控制（PID）来控制在直径和拉速之间的时域中定义的二次关系的非线性系统。 本发明将直径和拉速之间的时域中的二次关系变换成在晶锭的弯月面锥度与拉速之间的长度域中的简单的线性关系。 本发明应用在长度域内工作的线性控制（改进的PID），并且控制在长度域中具有晶锭锥度和拉速之间的线性关系的系统，以控制生长中的硅锭的直径。

    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS
    10.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING DIAMETER OF A SILICON CRYSTAL INGOT IN A GROWTH PROCESS 有权

    公开(公告)号：US20100206219A1

    公开(公告)日：2010-08-19

    申请号：US12719405

    申请日：2010-03-08

    申请人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    发明人： Benno Orschel ,  Joel Kearns ,  Keiichi Takanashi ,  Volker Todt

    IPC分类号： C30B15/24

    CPC分类号： C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

    摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.