发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US111018申请日： 1987-10-21
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公开(公告)号： US5031005A公开(公告)日： 1991-07-09
- 发明人: Toshiro Futatsugi , Naoki Yokoyama , Kenichi Imamura
- 申请人： Toshiro Futatsugi , Naoki Yokoyama , Kenichi Imamura
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX61-249572 19861022; JPX61-276953 19861120
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/205 ; H01L29/737 ; H01L33/00
摘要：
A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of .vertline.Ec.sub.3 -Ec.sub.1 .vertline..apprxeq..vertline.Ev.sub.3 -Ev.sub.5 .vertline., where Ec.sub.3 is a resonant energy level of electrons in a conduction band of the third layer and Ev.sub.3 is a resonant energy level of holes in a valence band thereof, and Ec.sub.1 is an energy level of a conduction band of the first layer and Ev.sub.5 is an energy level of a valence band of the fifth layer.
公开/授权文献
- USD427763S Lighted walking stick 公开/授权日：2000-07-11
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