发明授权
- 专利标题： Method of forming a fine pattern
- 专利标题（中）： 形成精细图案的方法
-
申请号： US234725申请日： 1988-08-22
-
公开(公告)号： US5032491A公开(公告)日： 1991-07-16
- 发明人: Katsuya Okumura , Tohru Watanabe
- 申请人： Katsuya Okumura , Tohru Watanabe
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX62-206745 19870820
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/027 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
摘要：
A photoresist is coated on a substrate to form a planar surface, thus to form a recessed portions corresponding to a mask of a pattern to be formed in the photoresist layer having planar surface. SiO.sub.2 etc. are deposited into the recessed portions to prepare a mask, thus to form a fine pattern by anisotropic etching. As a result, by films remaining below the recessed portions formed in the photoresist layer having planar surface, a fine pattern is formed.
公开/授权文献
- US5476494A Low pressure neural contact structure 公开/授权日：1995-12-19
信息查询
IPC分类:
