发明授权
- 专利标题: Electron beam lithography apparatus
- 专利标题(中): 电子束光刻设备
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申请号: US582083申请日: 1990-09-14
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公开(公告)号: US5047647A公开(公告)日: 1991-09-10
- 发明人: Hiroyuki Itoh , Kenichi Hirane
- 申请人: Hiroyuki Itoh , Kenichi Hirane
- 申请人地址: JPX Tokyo JPX Ibaraki
- 专利权人: Hitachi, Ltd.,Hitachi Instrument Engineering Co.
- 当前专利权人: Hitachi, Ltd.,Hitachi Instrument Engineering Co.
- 当前专利权人地址: JPX Tokyo JPX Ibaraki
- 优先权: JPX1-250479 19890928
- 主分类号: H01J37/147
- IPC分类号: H01J37/147 ; H01J37/153 ; H01J37/304 ; H01J37/305 ; H01L21/027
摘要:
An electron beam lithography apparatus comprising an electron lens, a deflector, a reflective electron detector of marks on a stage or a specimen thereon when the deflector scans the marks, and a means for memorizing high order polynomial equations and calculating a correcting value of the deflector controlling means based on the high order polynomial equations, wherein all coefficients of the high order polynomial equation are calculated when the electron beam lithography apparatus starts up, and after then, coefficient of the first order term is calculated from the position signals of the marks frequently in a short cycle.
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