发明授权
- 专利标题： Insulated gate field effect device
- 专利标题（中）： 绝缘栅场效应器
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申请号： US315668申请日： 1989-02-27
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公开(公告)号： US5047812A公开(公告)日： 1991-09-10
- 发明人: James R. Pfiester
- 申请人： James R. Pfiester
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/423 ; H01L29/78
摘要：
An insulated gate field effect device is disclosed having a channel region which includes both a horizontal and a vertical portion. The device is fabricated on a semiconductor substrate having a recess formed in its surface. The recess has a bottom forming a second surface with the wall of the recess extending between the first and second surfaces. A source region is formed at the first surface and a drain is formed at the second surface spaced apart from the wall. A channel region is defined along the wall and the second surface between the drain region and the source region. A gate insulator and gate electrode overlie the channel region.
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