An electronic device includes a plurality of thin film transistors (TFTs) which commonly use source and drain electrodes and which are arranged in parallel in the channel direction. Each TFT comprises a thin semiconductor film formed on a substrate. A gate insulative layer is arranged between at least one surface of the thin semiconductor film and a gate electrode. A source electrode and a drain electrode are arranged over at least one of the surfaces of the thin semiconductor film. With this electronic device, the parasitic capacitances which are generated among the gage, source, and drain electrodes are constant without depending on the patterning accuracy, and the offset components which are applied to the output signal hardly cause a variation. Thus, the good TFT characteristic is obtained.