发明授权
- 专利标题: MOS integrated circuit for driving light-emitting diodes
- 专利标题(中): MOS集成电路驱动发光二极管
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申请号: US347492申请日: 1989-05-04
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公开(公告)号: US5061861A公开(公告)日: 1991-10-29
- 发明人: Kazuhiro Sameshima , Masaru Ohnishi
- 申请人: Kazuhiro Sameshima , Masaru Ohnishi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-124401 19880520; JPX1-38661 19890217
- 主分类号: G05F3/26
- IPC分类号: G05F3/26 ; G06K15/12 ; H05B33/08
摘要:
An MOS integrated circuit for driving light-emitting diodes (LED's) comprises first constant current circuits, each of which is for one of the LED's and includes a first drive circuit for maintaining the drive current for the associated LED at a predetermined value established by a first reference voltage. The integrated circuit further includes a second constant current circuit which is connected to all of the first constant current circuits to form a mirror circuit with each of said first constant current circuits. A current detecting element detects a predetermined magnitude of current flowing therethrough and develops a current-representative detection voltage. A second drive circuit within the second constant current circuit responds to the detection voltage and a second reference voltage by maintaining said first reference voltage at a predetermined value so that the LED drive current is determined by the said detection voltage and second reference voltage.
公开/授权文献
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