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发明授权
US5063423A Semiconductor memory device of a floating gate tunnel oxide type 失效
浮栅隧道氧化物半导体存储器件

Semiconductor memory device of a floating gate tunnel oxide type
摘要：
A tunnel insulating film of a three-layer structure, wherein an oxide film is interposed between nitrided oxide films, is formed on the surface of a semiconductor substrate. A first polysilicon film serving as a low-concentration impurity region is formed on the tunnel insulating film. An oxide film is formed on that region of the first polysilicon film, which corresponds to the tunnel insulating film, the oxide film having such a thickness that the film can serve as a stopper for impurity diffusion and can allow electrons to pass through. A second polysilicon film, having an impurity concentration higher than that of the first polysilicon film, is formed on the oxide film. The first and second polysilicon films constitute a floating gate. A third polysilicon film serving as a control gate is formed above the second polysilicon film, with an insulating layer interposed therebetween.
摘要（中）：

在半导体衬底的表面上形成三层结构的隧道绝缘膜，其中在氮化氧化物膜之间插入氧化膜。 在隧道绝缘膜上形成用作低浓度杂质区的第一多晶硅膜。 在第一多晶硅膜的与隧道绝缘膜相对应的区域上形成氧化膜，氧化膜具有使膜能够作为用于杂质扩散的阻挡层的厚度，并且可以使电子通过。 在氧化膜上形成杂质浓度高于第一多晶硅膜的第二多晶硅膜。 第一和第二多晶硅膜构成浮栅。 用作控制栅极的第三多晶硅膜形成在第二多晶硅膜上方，绝缘层位于其间。

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