发明授权
- 专利标题: Semiconductor memory integrated circuit
- 专利标题(中): 半导体存储器集成电路
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申请号: US446003申请日: 1989-12-05
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公开(公告)号: US5065361A公开(公告)日: 1991-11-12
- 发明人: Makoto Yoshizawa , Tadashi Maruyama
- 申请人: Makoto Yoshizawa , Tadashi Maruyama
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-326453 19881224
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/06 ; G11C16/08 ; G11C16/30
摘要:
A semiconductor memory integrated circuit is made up of a decoder, a memory matrix, and a decode output buffer selectively receiving a first or second power source voltage. The decode output buffer is provided between the decoder and the memory matrix, and includes an inverter circuit for inverting the output signal of the decoder, and a MOS transistor of a depletion mode, the gate of which is connected to the output terminal of the inverter, the first end of which is connected to a supply node of the first or second power source voltage, and the second end of which is connected to a power voltage supply node of the inverter circuit.
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