发明授权
US5077594A Integrated high voltage transistors having minimum transistor to
transistor crosstalk
失效
具有最小晶体管至晶体管串扰的集成高压晶体管
- 专利标题： Integrated high voltage transistors having minimum transistor to transistor crosstalk
- 专利标题（中）： 具有最小晶体管至晶体管串扰的集成高压晶体管
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申请号： US494652申请日： 1990-03-16
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公开(公告)号： US5077594A公开(公告)日： 1991-12-31
- 发明人: Lowell E. Clark , Robert B. Davies , Bernard W. Boland
- 申请人： Lowell E. Clark , Robert B. Davies , Bernard W. Boland
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L29/08 ; H01L29/10
摘要：
Integrated high voltage transistors having minimum transistor to transistor crosstalk are fabricated in refilled epitaxial tubs, which are formed in a heavily doped substrate. The heavily doped substrate provides the isolation between each transistor, and thus provides for minimum transistor to transistor crosstalk. The voltage capability of the transistor is increased by forming the base surrounding the collector contact in the refilled epitaxial tub.
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